SCHEMBL593121

SCHEMBL593121

O=[La].[AlH3]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28391841 1.00
SCHEMBL16670957 0.89
SCHEMBL28703026 0.89
SCHEMBL28639189 0.89
SCHEMBL5891778 0.89
SCHEMBL2730131 0.89
SCHEMBL36464 0.87
SCHEMBL15992494 0.82
SCHEMBL4650616 0.75
SCHEMBL1889452 0.75

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 87 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-108231873-B Semiconductor device with a plurality of semiconductor chips 台湾积体电路制造股份有限公司 2022-10-25 CN claimed
US-10840259-B2 Three-dimensional memory device including liner free molybdenum word lines and methods of making the same SANDISK TECHNOLOGIES LLC (US) 2020-11-17 US claimed
US-20200051993-A1 THREE-DIMENSIONAL MEMORY DEVICE INCLUDING LINER FREE MOLYBDENUM WORD LINES AND METHODS OF MAKING THE SAME SanDisk Technologies, Inc. 2020-02-13 US claimed
CN-121318484-A Gradient sintering process for improving elimination rate of closed pores of ceramic 无锡海古德新技术有限公司 2026-01-13 CN disclosed
US-12464783-B2 Insulated gate semiconductor device FUJI ELECTRIC CO., LTD. (JP) 2025-11-04 US disclosed
US-12447533-B2 Powder material for use in additive layer manufacturing, additive layer manufacturing method using same, and molded article FUJIMI INCORPORATED (JP) 2025-10-21 US disclosed
US-12409633-B2 Structure and exterior housing Sony Group Corporation (JP) 2025-09-09 US disclosed
CN-120152283-A Semiconductor structure and preparation method thereof 长鑫科技集团股份有限公司 2025-06-13 CN disclosed
EP-4533150-A1 METAL OXIDE FILMS AND UV-CURABLE PRECURSOR SOLUTIONS FOR DEPOSITION OF METAL OXIDE FILMS Phosio Corporation (US) 2025-04-09 EP disclosed
CN-119786558-A Lithium manganate material and preparation method and application thereof 宁波容百新能源科技股份有限公司 2025-04-08 CN disclosed
CN-119743953-A Three-dimensional semiconductor device and method for manufacturing the same 长鑫科技集团股份有限公司 2025-04-01 CN disclosed
US-20060046522-A1 Atomic layer deposited lanthanum aluminum oxide dielectric layer MICRON TECHNOLOGY, INC. 2006-03-02 US disclosed
US-20050088788-A1 Magnetoresistive effect element and magnetic memory having the same KABUSHIKI KAISHA TOSHIBA (JP) 2005-04-28 US disclosed
CN-1591903-A Semiconductor device TOSHIBA KK (JP) 2005-03-09 CN disclosed
US-6826078-B2 Magnetoresistive effect element and magnetic memory having the same KABUSHIKI KAISHA TOSHIBA (JP) 2004-11-30 US disclosed
US-6823201-B2 Superconducting microstrip filter having current density reduction parts FUJITSU LIMITED (JP) 2004-11-23 US disclosed
US-6765821-B2 Magnetic memory KABUSHIKI KAISHA TOSHIBA (JP) 2004-07-20 US disclosed
US-20030185046-A1 Magnetoresistive effect element and magnetic memory having the same KABUSHIKI KAISHA TOSHIBA (JP) 2003-10-02 US disclosed
US-20030016094-A1 Superconducting microstrip filter FUJITSU LIMITED (JP) 2003-01-23 US disclosed
EP-1265310-A1 SUPERCONDUCTING MICROSTRIP FILTER FUJITSU LIMITED (JP) 2002-12-11 EP disclosed