SCHEMBL59598

SCHEMBL59598

NC1(C2(C(=O)O)CCCCCC2)CCCCCC1

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CYP2C19 P33261 3/20 0.38
TSHR P16473 3/20 0.36
LMNA P02545 2/20 0.35
CYP1A2 P05177 2/20 0.35
USP2 O75604 1/20 0.35
ALDH1A1 P00352 1/20 0.35
BLM P54132 1/20 0.35
CACNA2D1 P54289 1/20 0.35
SMN1; SMN2 Q16637 1/20 0.35
GRM4 Q14833 4/20 0.34
GRM2 Q14416 3/20 0.34
GRM3 Q14832 3/20 0.34
GRM8 O00222 2/20 0.34
GRM6 O15303 2/20 0.34
ALOX15 P16050 1/20 0.34
TDP1 Q9NUW8 1/20 0.34
GRM5 P41594 1/20 0.34
MTOR P42345 1/20 0.34
GRM1 Q13255 1/20 0.34
PLCB1 Q9NQ66 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL7018595 0.81 CYP2C19 (0.46) CYP2C19TSHRLMNACYP1A2USP2
SCHEMBL10276856 0.81 CYP2C19 (0.46) CYP2C19TSHRLMNACYP1A2USP2
SCHEMBL358029 0.81 CYP2C19 (0.46) CYP2C19TSHRLMNACYP1A2USP2
SCHEMBL3831087 0.81 CYP2C19 (0.46) CYP2C19TSHRLMNACYP1A2USP2
SCHEMBL23245204 0.78 CYP2C19 (0.42) CYP2C19TSHRLMNACYP1A2USP2
SCHEMBL11208917 0.78 CYP2C19 (0.42) CYP2C19TSHRLMNACYP1A2USP2
SCHEMBL9372565 0.75 CYP2C19 (0.40) CYP2C19TSHRLMNACYP1A2USP2
SCHEMBL8396115 0.75 CYP2C19 (0.40) CYP2C19TSHRLMNACYP1A2USP2
SCHEMBL7737327 0.75 SLC1A2 (0.34) CYP2C19TSHRALDH1A1SMN1; SMN2
SCHEMBL6701847 0.73 GRM2 (0.32) CYP2C19TSHRLMNACYP1A2GRM4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8129092-B2 Resist pattern thickening material and process for forming resist pattern, and semiconductor device and method for manufacturing the same FUJITSU LIMITED (JP) 2012-03-06 US claimed
US-20120126372-A1 RESIST PATTERN THICKENING MATERIAL AND PROCESS FOR FORMING RESIST PATTERN, AND SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2012-05-24 US disclosed
US-8129092-B2 Resist pattern thickening material and process for forming resist pattern, and semiconductor device and method for manufacturing the same FUJITSU LIMITED (JP) 2012-03-06 US disclosed
CN-1975571-B Resist pattern thickening material and process for forming resist pattern, and semiconductor device and method for manufacturing the same FUJITSU LTD 2011-04-06 CN disclosed
EP-1793274-A2 Resist pattern thickening material and process for forming resist pattern, and semiconductor device and method for manufacturing the same FUJITSU LIMITED (JP) 2007-06-06 EP disclosed
CN-1975571-A Resist pattern thickening material and process for forming resist pattern, and semiconductor device and method for manufacturing the same FUJITSU LTD (JP) 2007-06-06 CN disclosed
US-20070123623-A1 Resist pattern thickening material and process for forming resist pattern, and semiconductor device and method for manufacturing the same FUJITSU LIMITED (JP) 2007-05-31 US disclosed