SCHEMBL59600

SCHEMBL59600

O=C(O)C1(NC2(C(=O)O)CCCCCC2)CCCCCC1

nearest known ligand 0.41

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
CYP2C19 P33261 1/20 0.41
CYP1A2 P05177 2/20 0.39
USP2 O75604 2/20 0.36
SMN1; SMN2 Q16637 2/20 0.36
HTT P42858 1/20 0.36
ALDH1A1 P00352 3/20 0.35
FFAR3 O14843 1/20 0.33
AKR1C1 Q04828 1/20 0.33
LMNA P02545 1/20 0.33
TSHR P16473 1/20 0.33
BLM P54132 1/20 0.33
CACNA2D1 P54289 1/20 0.33
MAPT P10636 1/20 0.32
HDAC4 P56524 1/20 0.32
FAAH O00519 1/20 0.32
FABP4 P15090 3/20 0.31
FABP5 Q01469 3/20 0.31
CPB2 Q96IY4 2/20 0.31
L3MBTL1 Q9Y468 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2837316 0.81 KMT2A (0.40) CYP2C19CYP1A2USP2SMN1; SMN2HTT
SCHEMBL7824150 0.81 CYP2C19 (0.39) CYP2C19CYP1A2USP2SMN1; SMN2HTT
Hydrochloric Acid SCHEMBL1226520 0.79 KMT2A (0.39) CYP2C19CYP1A2USP2SMN1; SMN2HTT
SCHEMBL2533761 0.79 CYP2C19 (0.38) CYP2C19CYP1A2USP2SMN1; SMN2HTT
SCHEMBL7304213 0.79 CYP2C19 (0.38) CYP2C19CYP1A2USP2SMN1; SMN2HTT
SCHEMBL2532414 0.79 CYP2C19 (0.38) CYP2C19CYP1A2USP2SMN1; SMN2HTT
SCHEMBL8378194 0.79 CYP2C19 (0.38) CYP2C19CYP1A2USP2SMN1; SMN2HTT
Bromide SCHEMBL16057314 0.79 KMT2A (0.39) CYP2C19CYP1A2USP2SMN1; SMN2HTT
SCHEMBL10808711 0.79 ALDH1A1 (0.40) CYP2C19CYP1A2USP2SMN1; SMN2HTT
SCHEMBL14253223 0.79 CYP2C19 (0.38) CYP2C19CYP1A2USP2SMN1; SMN2HTT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8129092-B2 Resist pattern thickening material and process for forming resist pattern, and semiconductor device and method for manufacturing the same FUJITSU LIMITED (JP) 2012-03-06 US claimed
US-20120126372-A1 RESIST PATTERN THICKENING MATERIAL AND PROCESS FOR FORMING RESIST PATTERN, AND SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2012-05-24 US disclosed
US-8129092-B2 Resist pattern thickening material and process for forming resist pattern, and semiconductor device and method for manufacturing the same FUJITSU LIMITED (JP) 2012-03-06 US disclosed
CN-1975571-B Resist pattern thickening material and process for forming resist pattern, and semiconductor device and method for manufacturing the same FUJITSU LTD 2011-04-06 CN disclosed
EP-1793274-A2 Resist pattern thickening material and process for forming resist pattern, and semiconductor device and method for manufacturing the same FUJITSU LIMITED (JP) 2007-06-06 EP disclosed
CN-1975571-A Resist pattern thickening material and process for forming resist pattern, and semiconductor device and method for manufacturing the same FUJITSU LTD (JP) 2007-06-06 CN disclosed
US-20070123623-A1 Resist pattern thickening material and process for forming resist pattern, and semiconductor device and method for manufacturing the same FUJITSU LIMITED (JP) 2007-05-31 US disclosed