SCHEMBL60359

SCHEMBL60359

CC(O)C(C)(C(=O)O)c1ccccc1

nearest known ligand 0.52

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CYP1A2 P05177 2/20 0.52
CYP2D6 P10635 2/20 0.52
MAPT P10636 2/20 0.47
KMT2A Q03164 1/20 0.47
HIF1A Q16665 2/20 0.45
CYP2C19 P33261 2/20 0.45
HDAC3 O15379 1/20 0.44
HDAC4 P56524 1/20 0.44
HDAC1 Q13547 1/20 0.44
HDAC7 Q8WUI4 1/20 0.44
HDAC2 Q92769 1/20 0.44
HDAC10 Q969S8 1/20 0.44
HDAC11 Q96DB2 1/20 0.44
HDAC8 Q9BY41 1/20 0.44
HDAC6 Q9UBN7 1/20 0.44
HDAC9 Q9UKV0 1/20 0.44
HDAC5 Q9UQL6 1/20 0.44
CYP2C9 P11712 3/20 0.42
KCNN4 O15554 1/20 0.41
ALDH1A1 P00352 2/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3304253 0.87 CYP1A2 (0.57) CYP1A2CYP2D6MAPTKMT2AHIF1A
SCHEMBL28393924 0.87 CYP1A2 (0.47) CYP1A2CYP2D6MAPTKMT2AHIF1A
SCHEMBL28727642 0.85 CYP1A2 (0.55) CYP1A2CYP2D6MAPTKMT2AHIF1A
SCHEMBL28727574 0.85 CYP1A2 (0.55) CYP1A2CYP2D6MAPTKMT2AHIF1A
SCHEMBL10445349 0.83 CYP2D6 (0.48) CYP1A2CYP2D6MAPTKMT2AHIF1A
SCHEMBL17065513 0.83 CYP1A2 (0.48) CYP1A2CYP2D6MAPTKMT2AHIF1A
SCHEMBL1666946 0.83 CYP1A2 (0.53) CYP1A2CYP2D6MAPTKMT2AHIF1A
SCHEMBL5165367 0.83 CYP1A2 (0.48) CYP1A2CYP2D6MAPTKMT2AHIF1A
SCHEMBL6449832 0.82 CYP2D6 (0.47) CYP1A2CYP2D6MAPTKMT2AHIF1A
SCHEMBL3159723 0.80 KIF11 (0.48) CYP1A2CYP2D6MAPTKMT2AHIF1A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2762565-B1 NOVEL AMIDASE KANEKA CORP (JP) 2016-11-30 EP disclosed
US-9493762-B2 Vector, a transformant and a method to produce a polypeptide having activity to selectively hydrolyze a (R)-tropic acid amide in a racemic mixture KANEKA CORPORATION (JP) 2016-11-15 US disclosed
US-8906598-B2 Pattern forming method, method for manufacturing semiconductor device, and material for forming coating layer of resist pattern FUJITSU LIMITED (JP) 2014-12-09 US disclosed
US-20140335575-A1 NOVEL AMIDASE KANEKA CORPORATION (JP) 2014-11-13 US disclosed
EP-2762565-A1 NOVEL AMIDASE Kaneka Corporation (JP) 2014-08-06 EP disclosed
US-8476346-B2 Resist pattern thickening material, semiconductor device, and production method thereof FUJITSU LIMITED (JP) 2013-07-02 US disclosed
US-20120126372-A1 RESIST PATTERN THICKENING MATERIAL AND PROCESS FOR FORMING RESIST PATTERN, AND SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2012-05-24 US disclosed
US-8129092-B2 Resist pattern thickening material and process for forming resist pattern, and semiconductor device and method for manufacturing the same FUJITSU LIMITED (JP) 2012-03-06 US disclosed
US-20110250541-A1 PATTERN FORMING METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND MATERIAL FOR FORMING COATING LAYER OF RESIST PATTERN FUJITSU LIMITED (JP) 2011-10-13 US disclosed
US-20110101508-A1 RESIST PATTERN THICKENING MATERIAL, SEMICONDUCTOR DEVICE, AND PRODUCTION METHOD THEREOF FUJITSU LIMITED (JP) 2011-05-05 US disclosed
CN-1975571-B Resist pattern thickening material and process for forming resist pattern, and semiconductor device and method for manufacturing the same FUJITSU LTD 2011-04-06 CN disclosed
EP-1793274-A2 Resist pattern thickening material and process for forming resist pattern, and semiconductor device and method for manufacturing the same FUJITSU LIMITED (JP) 2007-06-06 EP disclosed
CN-1975571-A Resist pattern thickening material and process for forming resist pattern, and semiconductor device and method for manufacturing the same FUJITSU LTD (JP) 2007-06-06 CN disclosed
US-20070123623-A1 Resist pattern thickening material and process for forming resist pattern, and semiconductor device and method for manufacturing the same FUJITSU LIMITED (JP) 2007-05-31 US disclosed