⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Arsenic SCHEMBL10338513 | 0.87 | — | — | |
| Arsenic SCHEMBL27611171 | 0.87 | — | — | |
| Arsenic SCHEMBL3856681 | 0.87 | — | — | |
| Arsenic SCHEMBL18787928 | 0.87 | — | — | |
| Arsenic SCHEMBL17685671 | 0.87 | — | — | |
| Arsenic SCHEMBL603008 | 0.82 | — | — | |
| Arsenic SCHEMBL5056663 | 0.82 | — | — | |
| Arsenic SCHEMBL27281161 | 0.82 | — | — | |
| Arsenic SCHEMBL1011659 | 0.82 | — | — | |
| SCHEMBL730929 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 26 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-118712258-A | Photoelectric detector and manufacturing method thereof | 山东云海国创云计算装备产业创新中心有限公司 | 2024-09-27 | — | — | CN | claimed |
| CN-114774704-A | Method for producing low-lead-tin-based Babbitt alloy by using tin refining slag | 柳州华锡有色设计研究院有限责任公司 | 2022-07-22 | — | — | CN | claimed |
| US-10033160-B2 | Interband cascade light emitting devices | THE BOARD OF REGENTS OF THE UNIVERSITY OF OKLAHOMA (US) | 2018-07-24 | — | — | US | claimed |
| US-20170125979-A1 | Interband Cascade Light Emitting Devices | NATIONAL RESEARCH COUNCIL OF CANADA (CA) | 2017-05-04 | — | — | US | claimed |
| US-20130137238-A1 | METHOD FOR FORMING HIGH MOBILITY CHANNELS IN III-V FAMILY CHANNEL DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2013-05-30 | — | — | US | claimed |
| US-5974073-A | VERICAL CAVITY SURFACE EMITTING LASER; MIRROR(S) HAVE ALTERNATING FIRST LAYER OF ALUMINUM, ARSENIC, AND ANTIMONY (SB) SEMICONDUCTOR AND SECOND LAYER OF GALLIUM, PHOSPHORUS, AND SB LATTICE MATCHED TO ACTIVE LAYER; TELECOMMUNICATIONS | BRITISH TELECOMMUNICATIONS PUBLIC LIMITED COMPANY (GB) | 1999-10-26 | — | — | US | claimed |
| EP-0865124-A1 | Mirrors for VCSEL | BRITISH TELECOMMUNICATIONS public limited company (GB) | 1998-09-16 | — | — | EP | claimed |
| CN-121310692-A | Preparation method of barrier antimonide infrared detector and infrared detector | 中国空间技术研究院 | 2026-01-09 | — | — | CN | disclosed |
| US-20250380532-A1 | LIGHT RECEIVING DEVICE | SUMITOMO ELECTRIC INDUSTRIES, LTD. (JP) | 2025-12-11 | — | — | US | disclosed |
| CN-119208428-A | Avalanche photodetector chip and preparation method thereof | 中国科学院半导体研究所 | 2024-12-27 | — | — | CN | disclosed |
| CN-118829900-A | Lidar system with angle of incidence determination | 卢米诺技术公司 | 2024-10-22 | — | — | CN | disclosed |
| CN-118712258-A | Photoelectric detector and manufacturing method thereof | 山东云海国创云计算装备产业创新中心有限公司 | 2024-09-27 | — | — | CN | disclosed |
| CN-114774704-B | Method for producing low-lead tin-based Babbitt alloy by utilizing tin refining slag | 柳州华锡有色设计研究院有限责任公司 | 2023-09-15 | — | — | CN | disclosed |
| CN-106575672-A | Apparatus and method for creating an indium gallium arsenide active channel with an indium rich surface | 英特尔公司 | 2017-04-19 | — | — | CN | disclosed |
| CN-105990255-A | Method for manufacturing semiconductor device | 台湾积体电路制造股份有限公司 | 2016-10-05 | — | — | CN | disclosed |
| US-20130137238-A1 | METHOD FOR FORMING HIGH MOBILITY CHANNELS IN III-V FAMILY CHANNEL DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2013-05-30 | — | — | US | disclosed |
| EP-1512205-B1 | METHOD AND APPARATUS FOR TUNABLE WAVELENGTH CONVERSION USING A BRAGG GRATING AND A LASER IN A SEMICONDUCTOR SUBSTRATE | INTEL CORP (US) | 2006-11-29 | — | — | EP | disclosed |
| US-6788727-B2 | Method and apparatus for tunable wavelength conversion using a bragg grating and a laser in a semiconductor substrate | INTEL CORPORATION | 2004-09-07 | — | — | US | disclosed |
| US-20030231686-A1 | Method and apparatus for tunable wavelength conversion using a bragg grating and a laser in a semiconductor substrate | INTEL CORPORATION | 2003-12-18 | — | — | US | disclosed |
| CN-1225067-A | Materials for production of containers | MERCK PATENT GMBH (DE) | 1999-08-04 | — | — | CN | disclosed |