Arsenic

Arsenic

SCHEMBL17685671

[AlH3].[AsH3].[AsH3].[InH3].[SbH3]

nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Arsenic SCHEMBL3856681 1.00
Arsenic SCHEMBL18787922 0.89
Arsenic SCHEMBL27629735 0.87
Arsenic SCHEMBL2458467 0.87
SCHEMBL13584060 0.87
Arsenic SCHEMBL2787866 0.87
Arsenic SCHEMBL27643190 0.87
SCHEMBL497876 0.87
Arsenic SCHEMBL6036372 0.87
Phosphine SCHEMBL7719867 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9496379-B2 Method and structure for III-V FinFET INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2016-11-15 US claimed
US-20160111496-A1 Method and Structure for III-V FinFET INTERNATIONAL BUSINESS MACHINES CORPORATION 2016-04-21 US claimed
US-10062577-B1 Method of fabricating III-V fin structures and semiconductor device with III-V fin structures UNITED MICROELECTRONICS CORP. (TW) 2018-08-28 US disclosed
US-9590085-B2 Method and structure for III-V FinFET INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2017-03-07 US disclosed
US-9496379-B2 Method and structure for III-V FinFET INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2016-11-15 US disclosed
US-20160163844-A1 Method and Structure for III-V FinFET INTERNATIONAL BUSINESS MACHINES CORPORATION 2016-06-09 US disclosed
US-20160111496-A1 Method and Structure for III-V FinFET INTERNATIONAL BUSINESS MACHINES CORPORATION 2016-04-21 US disclosed