⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2101405 | 0.87 | — | — | |
| SCHEMBL703323 | 0.85 | — | — | |
| SCHEMBL17717637 | 0.83 | — | — | |
| SCHEMBL18103916 | 0.79 | — | — | |
| SCHEMBL17717630 | 0.79 | — | — | |
| SCHEMBL21353639 | 0.79 | — | — | |
| SCHEMBL610082 | 0.78 | — | — | |
| SCHEMBL610974 | 0.77 | — | — | |
| SCHEMBL26255374 | 0.77 | — | — | |
| SCHEMBL706151 | 0.74 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 459 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12584212-B2 | Compositions and methods using same for germanium seed layer | VERSUM MATERIALS US, LLC (US) | 2026-03-24 | — | — | US | claimed |
| US-12421603-B2 | Composition for high temperature atomic layer deposition of high quality silicon oxide thin films | VERSUM MATERIALS US, LLC (US) | 2025-09-23 | — | — | US | claimed |
| CN-119900018-A | Composition for high temperature atomic layer deposition of high quality silicon oxide films | 弗萨姆材料美国有限责任公司 | 2025-04-29 | — | — | CN | claimed |
| US-20230287562-A1 | COMPOSITIONS ND METHODS USING SAME FOR GERMANIUM SEED LAYER | VERSUM MATERIALS US, LLC | 2023-09-14 | — | — | US | claimed |
| US-11649547-B2 | Deposition of carbon doped silicon oxide | VERSUM MATERIALS US, LLC (US) | 2023-05-16 | — | — | US | claimed |
| EP-4176100-A1 | COMPOSITIONS AND METHODS USING SAME FOR GERMANIUM SEED LAYER | Versum Materials US, LLC (US) | 2023-05-10 | — | — | EP | claimed |
| CN-114479788-B | Water-based drilling fluid composition suitable for high-temperature easily collapsed stratum, water-based drilling fluid, preparation method and application thereof | 中国石油化工股份有限公司 | 2023-03-31 | — | — | CN | claimed |
| US-11377539-B2 | Conjugated diene-based polymer, conjugated diene-based polymer composition, and method for producing conjugated diene-based polymer | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2022-07-05 | — | — | US | claimed |
| CN-114479788-A | Water-based drilling fluid composition suitable for high-temperature easily collapsed stratum, water-based drilling fluid, preparation method and application thereof | 中国石油化工股份有限公司 | 2022-05-13 | — | — | CN | claimed |
| EP-3535302-B1 | METHOD OF PRODUCING A MODIFIED DIENE-CONTAINING RUBBER, THE RUBBER AND A COMPOSITION BASED THEREON | SIBUR HOLDING PUBLIC JOINT STOCK CO (RU) | 2022-03-09 | — | — | EP | claimed |
| EP-2251899-B1 | Dielectric barrier deposition using nitrogen containing precursor | VERSUM MAT US LLC (US) | 2018-03-28 | — | — | EP | claimed |
| US-8889235-B2 | Dielectric barrier deposition using nitrogen containing precursor | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2014-11-18 | — | — | US | claimed |
| US-8765892-B2 | Conjugated diene polymer, conjugated diene polymer composition, and method for producing conjugated diene polymer | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2014-07-01 | — | — | US | claimed |
| US-20140065844-A1 | Amino Vinylsilane Precursors for Stressed SiN Films | VERSUM MATERIALS US, LLC | 2014-03-06 | — | — | US | claimed |
| US-20130295779-A1 | HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF SILICON OXIDE THIN FILMS | VERSUM MATERIALS US, LLC | 2013-11-07 | — | — | US | claimed |
| EP-2650399-A2 | High temperature atomic layer deposition of silicon oxide thin films | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2013-10-16 | — | — | EP | claimed |
| US-8460753-B2 | Methods for depositing silicon dioxide or silicon oxide films using aminovinylsilanes | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2013-06-11 | — | — | US | claimed |
| EP-2192207-B1 | Method using amino vinylsilane precursors for the deposition of intrinsically compressively stressed SiN films | AIR PROD & CHEM (US) | 2012-06-20 | — | — | EP | claimed |
| US-20100291321-A1 | Dielectric Barrier Deposition Using Nitrogen Containing Precursor | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2010-11-18 | — | — | US | claimed |
| EP-2251899-A1 | Dielectric barrier deposition using nitrogen containing precursor | Air Products and Chemicals, Inc. (US) | 2010-11-17 | — | — | EP | claimed |