SCHEMBL706151

SCHEMBL706151

C=C[Si](C)(N(C)CC)N(C)CC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15310142 0.93
SCHEMBL15310141 0.80
SCHEMBL26255373 0.78
SCHEMBL705024 0.78
SCHEMBL25174536 0.74
SCHEMBL706712 0.74
SCHEMBL610285 0.74
SCHEMBL3108275 0.74
SCHEMBL2101405 0.74
SCHEMBL705536 0.70

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 135 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12421603-B2 Composition for high temperature atomic layer deposition of high quality silicon oxide thin films VERSUM MATERIALS US, LLC (US) 2025-09-23 US claimed
US-11649547-B2 Deposition of carbon doped silicon oxide VERSUM MATERIALS US, LLC (US) 2023-05-16 US claimed
EP-3902939-A1 DEPOSITION OF CARBON DOPED SILICON OXIDE Versum Materials US, LLC (US) 2021-11-03 EP claimed
WO-2020163359-A1 DEPOSITION OF CARBON DOPED SILICON OXIDE VERSUM MATERIALS US, LLC (US) 2020-08-13 WO claimed
EP-2463404-B1 METHOD FOR FORMING SIO2 FILM VERSUM MAT US LLC (US) 2019-10-23 EP claimed
EP-2251899-B1 Dielectric barrier deposition using nitrogen containing precursor VERSUM MAT US LLC (US) 2018-03-28 EP claimed
US-9460912-B2 High temperature atomic layer deposition of silicon oxide thin films AIR PRODUCTS AND CHEMICALS, INC. (US) 2016-10-04 US claimed
US-8889235-B2 Dielectric barrier deposition using nitrogen containing precursor AIR PRODUCTS AND CHEMICALS, INC. (US) 2014-11-18 US claimed
US-20140065844-A1 Amino Vinylsilane Precursors for Stressed SiN Films VERSUM MATERIALS US, LLC 2014-03-06 US claimed
US-8460753-B2 Methods for depositing silicon dioxide or silicon oxide films using aminovinylsilanes AIR PRODUCTS AND CHEMICALS, INC. (US) 2013-06-11 US claimed
EP-2192207-B1 Method using amino vinylsilane precursors for the deposition of intrinsically compressively stressed SiN films AIR PROD & CHEM (US) 2012-06-20 EP claimed
US-20100291321-A1 Dielectric Barrier Deposition Using Nitrogen Containing Precursor AIR PRODUCTS AND CHEMICALS, INC. (US) 2010-11-18 US claimed
EP-2251899-A1 Dielectric barrier deposition using nitrogen containing precursor Air Products and Chemicals, Inc. (US) 2010-11-17 EP claimed
EP-4705309-A1 CHLOROSILYL-SUBSTITUTED SILACYCLOALKANES AND THEIR USE FOR FORMATION OF FILMS COMPRISING SILICON AND OXYGEN Versum Materials US, LLC (US) 2026-03-11 EP disclosed
US-12421603-B2 Composition for high temperature atomic layer deposition of high quality silicon oxide thin films VERSUM MATERIALS US, LLC (US) 2025-09-23 US disclosed
US-20250230301-A1 RUBBER COMPOSITION FOR HEAVY-DUTY TIRES ZEON CORPORATION (JP) 2025-07-17 US disclosed
US-5189109-A Acrylamide modified; impact strength; automobile tire SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 1993-02-23 US disclosed
US-5128416-A Automobile tire treads SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 1992-07-07 US disclosed
EP-0493364-A2 Modified diene polymer rubbers Sumitomo Chemical Industries Ltd. (JP) 1992-07-01 EP disclosed
EP-0334042-A2 Modified diene polymer rubbers SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 1989-09-27 EP disclosed