SCHEMBL613188

SCHEMBL613188

[As-3].[Ga+3].[In].[P]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5485153 0.89
SCHEMBL5574388 0.87
SCHEMBL49427 0.87
SCHEMBL7263528 0.75
SCHEMBL6374443 0.75
SCHEMBL6131460 0.75
SCHEMBL50133 0.75
SCHEMBL8035334 0.75
SCHEMBL7162106 0.75
SCHEMBL2745405 0.75

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 22 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8184984-B1 Optical transceiver having a modulating component FINISAR CORPORATION (US) 2012-05-22 US claimed
US-8115213-B2 Semiconductor light sources, systems, and methods PHOSEON TECHNOLOGY, INC. (US) 2012-02-14 US claimed
US-20080191194-A1 SEMICONDUCTOR LIGHT SOURCES, SYSTEMS, AND METHODS PHOSEON TECHNOLOGY, INC. (US) 2008-08-14 US claimed
US-9029239-B2 Separating semiconductor devices from substrate by etching graded composition release layer disposed between semiconductor devices and substrate including forming protuberances that reduce stiction SANDIA CORPORATION (US) 2015-05-12 US disclosed
US-20140048123-A1 SEPARATING SEMICONDUCTOR DEVICES FROM SUBSTRATE BY ETCHING GRADED COMPOSITION RELEASE LAYER DISPOSED BETWEEN SEMICONDUCTOR DEVICES AND SUBSTRATE INCLUDING FORMING PROTUBERANCES THAT REDUCE STICTION SANDIA CORPORATION (US) 2014-02-20 US disclosed
US-8184984-B1 Optical transceiver having a modulating component FINISAR CORPORATION (US) 2012-05-22 US disclosed
US-7088885-B1 System for modulating optical signals FINISAR CORPORATION (US) 2006-08-08 US disclosed
US-6845184-B1 Multi-layer opto-electronic substrates with electrical and optical interconnections and methods for making FUJITSU LIMITED (JP) 2005-01-18 US disclosed
US-6785447-B2 Single and multilayer waveguides and fabrication process FUJITSU LIMITED (JP) 2004-08-31 US disclosed
US-6706546-B2 Optical reflective structures and method for making FUJITSU LIMITED (JP) 2004-03-16 US disclosed
US-6690845-B1 Three-dimensional opto-electronic modules with electrical and optical interconnections and methods for making FUJITSU LIMITED (JP) 2004-02-10 US disclosed
US-20020097962-A1 Single and multilayer waveguides and fabrication process FUJITSU LIMITED (JP) 2002-07-25 US disclosed
US-20020039464-A1 Optical reflective structures and method for making FUJITSU LIMITED (JP) 2002-04-04 US disclosed
US-20020028045-A1 Optical coupling structures and the fabrication processes FUJITSU LIMITED (JP) 2002-03-07 US disclosed
US-6343171-B1 Systems based on opto-electronic substrates with electrical and optical interconnections and methods for making FUJITSU LIMITED (JP) 2002-01-29 US disclosed
EP-0826144-A4 LASER DIODE SPECTROMETER FOR ANALYZING THE RATIO OF ISOTOPIC SPECIES IN A SUBSTANCE SAN JOSE STATE UNIVERSITY FOUN (US) 1999-09-29 EP disclosed
EP-0826144-A1 LASER DIODE SPECTROMETER FOR ANALYZING THE RATIO OF ISOTOPIC SPECIES IN A SUBSTANCE San Jose State University Foundation (US) 1998-03-04 EP disclosed
US-5640014-A Laser diode spectrometer for analyzing the ratio of isotopic species in a substance SAN JOSE STATE UNIVERSITY FOUNDATION (US) 1997-06-17 US disclosed
WO-1996036867-A1 LASER DIODE SPECTROMETER FOR ANALYZING THE RATIO OF ISOTOPIC SPECIES IN A SUBSTANCE SAN JOSE STATE UNIVERSITY FOUNDATION (US) 1996-11-21 WO disclosed
US-5543621-A Laser diode spectrometer for analyzing the ratio of isotopic species in a substance SAN JOSE STATE UNIVERSITY FOUNDATION (US) 1996-08-06 US disclosed