SCHEMBL6140789

SCHEMBL6140789

Cc1ccc(S(=O)(=O)OS(c2ccc(OCC(=O)OC(C)(C)C)cc2)(c2ccc(OCC(=O)OC(C)(C)C)cc2)c2ccccn2)cc1

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 3/20 0.43
SMN1; SMN2 Q16637 2/20 0.43
NPC1 O15118 1/20 0.43
ALDH1A1 P00352 1/20 0.43
RAB9A P51151 1/20 0.43
MAPT P10636 2/20 0.43
KMT2A Q03164 2/20 0.43
LMNA P02545 2/20 0.43
MEN1 O00255 1/20 0.43
POLB P06746 1/20 0.41
PSEN1 P49768 1/20 0.40
PSEN2 P49810 1/20 0.40
APH1B Q8WW43 1/20 0.40
NCSTN Q92542 1/20 0.40
APH1A Q96BI3 1/20 0.40
PSENEN Q9NZ42 1/20 0.40
PTPN1 P18031 1/20 0.39
HIF1A Q16665 1/20 0.39
TRPM8 Q7Z2W7 1/20 0.39
GAA P10253 4/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6140563 0.98 KDM4E (0.43) KDM4ESMN1; SMN2NPC1ALDH1A1RAB9A
SCHEMBL8664474 0.92 POLB (0.43) KDM4ESMN1; SMN2NPC1ALDH1A1RAB9A
SCHEMBL6140522 0.88 KMT2A (0.40) KDM4ESMN1; SMN2NPC1ALDH1A1RAB9A
SCHEMBL8862182 0.87 PTPN1 (0.45) NPC1ALDH1A1MAPTKMT2ALMNA
SCHEMBL3197712 0.87 PTPN1 (0.45) NPC1ALDH1A1MAPTKMT2ALMNA
SCHEMBL8862149 0.87 PSEN1 (0.47) KDM4ENPC1RAB9AMAPTKMT2A
SCHEMBL8862196 0.87 PSEN1 (0.47) KDM4ENPC1RAB9AMAPTKMT2A
SCHEMBL8069409 0.87 PSEN1 (0.47) KDM4ENPC1RAB9AMAPTKMT2A
SCHEMBL8862177 0.85 L3MBTL1 (0.44) KDM4ENPC1MAPTKMT2ALMNA
SCHEMBL8862209 0.85 L3MBTL1 (0.44) KDM4ENPC1ALDH1A1MAPTKMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6955939-B1 Memory element formation with photosensitive polymer dielectric ADVANCED MICRO DEVICES, INC. (US) 2005-10-18 US disclosed
US-6878961-B2 Photosensitive polymeric memory elements ADVANCED MICRO DEVICES, INC. (US) 2005-04-12 US disclosed
US-20050045877-A1 PHOTOSENSITIVE POLYMERIC MEMORY ELEMENTS MORGAN STANLEY SENIOR FUNDING, INC. 2005-03-03 US disclosed
US-6825060-B1 Photosensitive polymeric memory elements ADVANCED MICRO DEVICES, INC. 2004-11-30 US disclosed
US-6534243-B1 A coating containing a cleaving compound to trim resist features; permitting a deprotection region to form within an inner portion of the patterned resist; removing coating and deprotection region to provide a second patterned feature ADVANCED MICRO DEVICES, INC. 2003-03-18 US disclosed
US-6492075-B1 COATING WITH CLEAVING COMPOUND TO CONTROLLABLY DECREASE SIZE OF DEVELOPED RESIST ADVANCED MICRO DEVICES, INC. 2002-12-10 US disclosed
US-6274289-B1 Chemical resist thickness reduction process ADVANCED MICRO DEVICES, INC. 2001-08-14 US disclosed
US-5847218-A Sulfonium salts and chemically amplified positive resist compositions SHIN-ETSU CHEMICAL CO., LTD. (JP) 1998-12-08 US disclosed