SCHEMBL6236455

SCHEMBL6236455

CC(O)C1CCCCC1C

nearest known ligand 0.48

Predicted protein targets (top 9)

geneUniProtsupporting neighboursconfidence
CA1 P00915 1/20 0.48
CA2 P00918 1/20 0.48
CA4 P22748 1/20 0.48
GBA1 P04062 1/20 0.37
EPHX1 P07099 1/20 0.34
TRPA1 O75762 2/20 0.33
TRPM8 Q7Z2W7 2/20 0.33
TAS1R3 Q7RTX0 1/20 0.32
TAS1R1 Q7RTX1 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14639771 1.00 CA1 (0.48) CA1CA2CA4GBA1EPHX1
SCHEMBL10005748 0.95
SCHEMBL349547 0.83 GBA1 (0.42) CA1CA2CA4GBA1TRPA1
SCHEMBL20991957 0.81 CA1 (0.50) CA1CA2CA4EPHX1TRPA1
SCHEMBL19886143 0.81 CA1 (0.50) CA1CA2CA4EPHX1TRPA1
SCHEMBL17751226 0.81 CA1 (0.50) CA1CA2CA4EPHX1TRPA1
SCHEMBL3480513 0.78 GBA1 (0.47) CA1CA2CA4GBA1TRPA1
SCHEMBL598630 0.78 CA1 (0.46) CA1CA2CA4EPHX1TRPA1
SCHEMBL20693175 0.78 CA1 (0.46) CA1CA2CA4EPHX1TRPA1
SCHEMBL16191287 0.78 CA1 (0.46) CA1CA2CA4EPHX1TRPA1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 24 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8993212-B2 Fluorine-containing sulfonic acid salts, photo-acid generator and resist composition and pattern formation method utilizing same CENTRAL GLASS COMPANY, LIMITED (JP) 2015-03-31 US disclosed
US-8993212-B2 Fluorine-containing sulfonic acid salts, photo-acid generator and resist composition and pattern formation method utilizing same CENTRAL GLASS COMPANY, LIMITED (JP) 2015-03-31 US disclosed
US-8859181-B2 Chemically amplified negative resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-10-14 US disclosed
US-8859181-B2 Chemically amplified negative resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-10-14 US disclosed
US-8632939-B2 Polymer, chemically amplified positive resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-01-21 US disclosed
US-8632939-B2 Polymer, chemically amplified positive resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-01-21 US disclosed
US-20130209938-A1 Fluorine-Containing Sulfonic Acid Salts, Photo-Acid Generator And Resist Composition And Pattern Formation Method Utilizing Same CENTRAL GLASS COMPANY, LTD. (JP) 2013-08-15 US disclosed
US-20130209938-A1 Fluorine-Containing Sulfonic Acid Salts, Photo-Acid Generator And Resist Composition And Pattern Formation Method Utilizing Same CENTRAL GLASS COMPANY, LTD. (JP) 2013-08-15 US disclosed
EP-2362268-B1 Polymer, chemically amplified positive resist compositions and pattern forming process SHINETSU CHEMICAL CO (JP) 2013-01-23 EP disclosed
EP-2362267-B1 Chemically amplified negative resist composition and patterning process SHINETSU CHEMICAL CO (JP) 2013-01-23 EP disclosed
US-20110318542-A1 Fluorine-Containing Compound, Fluorine-Containing Polymer Compound, Resist Composition and Patterning Method Using Same CENTRAL GLASS COMPANY, LIMITED (JP) 2011-12-29 US disclosed
US-20110212390-A1 CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-09-01 US disclosed
US-20110212391-A1 POLYMER, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-09-01 US disclosed
US-20110212391-A1 POLYMER, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-09-01 US disclosed
US-20110212390-A1 CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-09-01 US disclosed
EP-2362267-A1 Chemically amplified negative resist composition and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2011-08-31 EP disclosed
EP-2362268-A1 Polymer, chemically amplified positive resist composition and pattern forming process Shin-Etsu Chemical Co., Ltd. (JP) 2011-08-31 EP disclosed
WO-2010140483-A1 FLUORINE-CONTAINING COMPOUND, FLUORINE-CONTAINING POLYMER COMPOUND, RESIST COMPOSITION, TOP COAT COMPOSITION AND PATTERN FORMATION METHOD セントラル硝子株式会社 (JP) 2010-12-09 WO disclosed
WO-2007001283-A2 CHEMICAL SYNTHESIS OF LOW MOLECULAR WEIGHT POLYGLUCOSAMINES AND POLYGALACTOSAMINES E.I. DUPONT DE NEMOURS AND COMPANY (US) 2007-01-04 WO disclosed
WO-2005012222-A1 ALICYCLIC ESTER WITH MUSK FRAGRANCE SYMRISE GMBH & CO. KG (DE) 2005-02-10 WO disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20110318542-A1 Fluorine-Containing Compound, Fluorine-Containing Polymer Compound, Resist Composition and Patterning Method Using Same FRG1, AFF2, AFF1 CA1 1068/4885CA2 3273/4885CA4 2977/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.