Known targets — ChEMBL curated mechanism
ACHEBDKRB2CHRM1CHRM2CHRM3CHRNA1CHRNB1CHRNDCHRNECHRNGGUCY1A1GUCY1A2GUCY1B1GUCY1B2NAMPTPTAFRSLC10A2SLC6A2SLC6A3TACR1dacAdacBdacCftsImrcAmrcBmrdA
The experimentally established mechanism targets of Hydrochloric Acid. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL28822656 | 0.71 | — | — | |
| SCHEMBL27806916 | 0.71 | — | — | |
| SCHEMBL11904875 | 0.71 | — | — | |
| Hydrochloric Acid SCHEMBL7847798 | 0.71 | — | — | |
| SCHEMBL4049251 | 0.71 | — | — | |
| SCHEMBL29795443 | 0.71 | — | — | |
| SCHEMBL29651334 | 0.71 | — | — | |
| SCHEMBL7941817 | 0.71 | — | — | |
| Hydrochloric Acid SCHEMBL23706398 | 0.50 | — | — | |
| Hydrochloric Acid SCHEMBL11141820 | 0.50 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 247 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20250183054-A1 | SELECTIVE BOTTOM-UP FILL | ASM IP HOLDING B.V. (NL) | 2025-06-05 | — | — | US | claimed |
| CN-120072744-A | Selective bottom-up filling | ASM IP私人控股有限公司 | 2025-05-30 | — | — | CN | claimed |
| US-11996292-B2 | Methods for filling a gap feature on a substrate surface and related semiconductor structures | ASM IP HOLDING B.V. (NL) | 2024-05-28 | — | — | US | claimed |
| US-20240071766-A2 | METHODS FOR FILLING A GAP FEATURE ON A SUBSTRATE SURFACE AND RELATED SEMICONDUCTOR STRUCTURES | ASM IP HOLDING B.V. (NL) | 2024-02-29 | — | — | US | claimed |
| US-20230238239-A2 | METHODS FOR FILLING A GAP FEATURE ON A SUBSTRATE SURFACE AND RELATED SEMICONDUCTOR STRUCTURES | ASM IP HOLDING BV (NL) | 2023-07-27 | — | — | US | claimed |
| US-20230215728-A1 | METHODS FOR FORMING A SEMICONDUCTOR STRUCTURE INCLUDING A DIPOLE LAYER | ASM IP HOLDING B.V. (NL) | 2023-07-06 | — | — | US | claimed |
| US-20230175129-A1 | METHODS FOR IMPROVING THIN FILM QUALITY | ASM IP HOLDING B.V. (NL) | 2023-06-08 | — | — | US | claimed |
| US-11499247-B2 | Vapor-liquid reaction device, reaction tube, film forming apparatus | NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY (JP) | 2022-11-15 | — | — | US | claimed |
| CN-110637104-B | Gas-liquid reaction device, reaction tube, and film forming device | 国立大学法人东京农工大学 | 2022-03-25 | — | — | CN | claimed |
| US-20210125832-A1 | METHODS FOR FILLING A GAP FEATURE ON A SUBSTRATE SURFACE AND RELATED SEMICONDUCTOR STRUCTURES | ASM IP HOLDING BV (NL) | 2021-04-29 | — | — | US | claimed |
| US-20120291698-A1 | METHODS FOR IMPROVED GROWTH OF GROUP III NITRIDE SEMICONDUCTOR COMPOUNDS | APPLIED MATERIALS, INC. | 2012-11-22 | — | — | US | claimed |
| US-20120295418-A1 | METHODS FOR IMPROVED GROWTH OF GROUP III NITRIDE BUFFER LAYERS | APPLIED MATERIALS, INC. | 2012-11-22 | — | — | US | claimed |
| US-7427555-B2 | Growth of planar, non-polar gallium nitride by hydride vapor phase epitaxy | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA (US) | 2008-09-23 | — | — | US | claimed |
| US-7208393-B2 | Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA (US) | 2007-04-24 | — | — | US | claimed |
| EP-1576671-A4 | GROWTH OF PLANAR, NON-POLAR A-PLANE GALLIUM NITRIDE BY HYDRIDE VAPOR PHASE EPITAXY | UNIV CALIFORNIA (US) | 2006-10-25 | — | — | EP | claimed |
| US-20060008941-A1 | Growth of planar, non-polar a-plane gallium nitride by hydride vapor phase epitaxy | BASF AKTIENGESELLSCHAFT (DE) | 2006-01-12 | — | — | US | claimed |
| WO-2005122267-A2 | GROWTH OF PLANAR REDUCED DISLOCATION DENSITY M-PLANE GALLIUM NITRIDE BY HYDRIDE VAPOR PHASE EPITAXY | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA (US) | 2005-12-22 | — | — | WO | claimed |
| US-20050245095-A1 | Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA (US) | 2005-11-03 | — | — | US | claimed |
| EP-1576671-A1 | GROWTH OF PLANAR, NON-POLAR A-PLANE GALLIUM NITRIDE BY HYDRIDE VAPOR PHASE EPITAXY | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA (US) | 2005-09-21 | — | — | EP | claimed |
| WO-2004061969-A1 | GROWTH OF PLANAR, NON-POLAR A-PLANE GALLIUM NITRIDE BY HYDRIDE VAPOR PHASE EPITAXY | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA (US) | 2004-07-22 | — | — | WO | claimed |