SCHEMBL6322385

SCHEMBL6322385

O=C(Nc1cccc([N+](=O)[O-])c1)OCc1ccccc1[N+](=O)[O-]

nearest known ligand 0.55

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MEN1 O00255 8/20 0.55
KMT2A Q03164 8/20 0.55
MAPT P10636 6/20 0.55
POLB P06746 3/20 0.55
DDX3X O00571 2/20 0.55
HTT P42858 2/20 0.55
CTDSP1 Q9GZU7 1/20 0.55
ALDH1A1 P00352 5/20 0.53
SMN1; SMN2 Q16637 2/20 0.53
PTPN1 P18031 1/20 0.51
BLM P54132 1/20 0.50
NPC1 O15118 1/20 0.49
HSP90AA1 P07900 1/20 0.49
PKM P14618 1/20 0.49
HPGD P15428 1/20 0.49
CCR6 P51684 1/20 0.49
NPSR1 Q6W5P4 1/20 0.49
APOBEC3G Q9HC16 1/20 0.49
TNF P01375 1/20 0.49
LMNA P02545 1/20 0.49

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1058875 0.87 MAPT (0.51) MEN1KMT2AMAPTPOLBHTT
SCHEMBL6325022 0.87 MEN1 (0.56) MEN1KMT2AMAPTPOLBDDX3X
SCHEMBL11465037 0.86 HTT (0.54) MEN1KMT2AMAPTHTTALDH1A1
SCHEMBL15969151 0.86 ALDH1A1 (0.49) MEN1KMT2AMAPTPOLBHTT
SCHEMBL13915753 0.84 ALDH1A1 (0.67) MEN1KMT2AMAPTPOLBDDX3X
SCHEMBL29790015 0.80 KMT2A (0.53) MEN1KMT2AMAPTPOLBHTT
SCHEMBL30286160 0.80 ALDH1A1 (0.49) MEN1KMT2AMAPTALDH1A1SMN1; SMN2
SCHEMBL15970368 0.80 ALDH1A1 (0.49) MEN1KMT2AMAPTALDH1A1SMN1; SMN2
SCHEMBL22267390 0.80 ALDH1A1 (0.55) MEN1KMT2AMAPTPOLBALDH1A1
SCHEMBL15969176 0.80 SMN1; SMN2 (0.46) MEN1KMT2AMAPTPOLBALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1 patent. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20050090570-A1 Composition for forming dielectric film and method for forming dielectric film or pattern using the composition SAMSUNG ELECTRONICS CO., LTD. (KR) 2005-04-28 US disclosed