SCHEMBL6322953

SCHEMBL6322953

Cc1ccc([N+](=O)[O-])c(COC(=O)NC23CC4CC(CC(C4)C2)C3)c1

nearest known ligand 0.46

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
THRB P10828 5/20 0.46
MAPT P10636 3/20 0.46
LMNA P02545 2/20 0.46
VDR P11473 2/20 0.46
L3MBTL1 Q9Y468 1/20 0.45
THRA P10827 2/20 0.43
GFER P55789 1/20 0.42
CYP1A2 P05177 1/20 0.42
GLA P06280 1/20 0.42
CYP3A4 P08684 1/20 0.42
CYP2D6 P10635 1/20 0.42
CYP2C9 P11712 1/20 0.42
CYP2C19 P33261 1/20 0.42
HTT P42858 1/20 0.42
NPSR1 Q6W5P4 1/20 0.42
ALDH1A1 P00352 1/20 0.41
EPHX2 P34913 1/20 0.41
POLB P06746 2/20 0.41
MEN1 O00255 1/20 0.41
KMT2A Q03164 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6329441 0.84 MEN1 (0.46) THRBMAPTLMNAVDRL3MBTL1
SCHEMBL27432779 0.78 MAPT (0.46) MAPTL3MBTL1CYP3A4ALDH1A1MEN1
SCHEMBL3124043 0.76 TSHR (0.49) MAPTLMNACYP3A4ALDH1A1MEN1
SCHEMBL6331846 0.76 EPHX1 (0.50) LMNAALDH1A1POLBMEN1KMT2A
SCHEMBL17208795 0.72 TSHR (0.47) MAPTLMNACYP3A4HTTNPSR1
SCHEMBL27687102 0.71 TSHR (0.46) MAPTLMNACYP3A4ALDH1A1POLB
SCHEMBL26397636 0.71 TSHR (0.46) MAPTLMNAL3MBTL1CYP3A4ALDH1A1
SCHEMBL6321522 0.71 SMN1; SMN2 (0.53) MAPTLMNAL3MBTL1CYP1A2CYP3A4
SCHEMBL6325022 0.71 MEN1 (0.56) MAPTLMNAHTTNPSR1ALDH1A1
SCHEMBL10925830 0.70 CNR2 (0.49) MAPTL3MBTL1CYP1A2GLACYP3A4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1 patent. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20050090570-A1 Composition for forming dielectric film and method for forming dielectric film or pattern using the composition SAMSUNG ELECTRONICS CO., LTD. (KR) 2005-04-28 US disclosed