SCHEMBL6329441

SCHEMBL6329441

O=C(NC12CC3CC(CC(C3)C1)C2)OCc1ccccc1[N+](=O)[O-]

nearest known ligand 0.47

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MEN1 O00255 3/20 0.46
KMT2A Q03164 3/20 0.46
L3MBTL1 Q9Y468 2/20 0.46
LMNA P02545 1/20 0.45
MAPT P10636 1/20 0.45
THRB P10828 1/20 0.45
VDR P11473 1/20 0.45
EPHX2 P34913 3/20 0.44
ALDH1A1 P00352 2/20 0.44
PAX8 Q06710 1/20 0.44
FAAH O00519 1/20 0.43
CYP1A2 P05177 1/20 0.43
GLA P06280 1/20 0.43
CYP3A4 P08684 1/20 0.43
CYP2D6 P10635 1/20 0.43
CYP2C9 P11712 1/20 0.43
CYP2C19 P33261 1/20 0.43
HTT P42858 1/20 0.43
NPSR1 Q6W5P4 1/20 0.43
MAPK1 P28482 1/20 0.42

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10925830 0.85 CNR2 (0.49) MEN1KMT2AL3MBTL1MAPTALDH1A1
SCHEMBL6322953 0.84 THRB (0.46) MEN1KMT2AL3MBTL1LMNAMAPT
SCHEMBL10925246 0.81 CYP17A1 (0.50) MEN1KMT2AL3MBTL1MAPTALDH1A1
SCHEMBL15102775 0.80 DPP8 (0.39) LMNAMAPTTHRBVDR
SCHEMBL14616994 0.79 ALDH1A1 (0.42) MEN1KMT2AL3MBTL1ALDH1A1HTT
SCHEMBL13064065 0.78 KMT2A (0.47) MEN1KMT2ALMNAMAPTEPHX2
SCHEMBL3360266 0.76 KDM1A (0.51) MEN1KMT2AL3MBTL1ALDH1A1HTT
SCHEMBL14962141 0.75 MAOB (0.50) MEN1KMT2AL3MBTL1LMNAALDH1A1
SCHEMBL31496023 0.75 MAOB (0.53) MEN1KMT2AL3MBTL1MAPTALDH1A1
SCHEMBL12089304 0.75 MAOB (0.53) MEN1KMT2AL3MBTL1MAPTALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 38 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9494866-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2016-11-15 US disclosed
US-9405200-B2 Resist composition and method of forming resist pattern TOYKO OHKA KOGYO CO., LTD. (JP) 2016-08-02 US disclosed
US-9405200-B2 Resist composition and method of forming resist pattern TOYKO OHKA KOGYO CO., LTD. (JP) 2016-08-02 US disclosed
US-9377685-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2016-06-28 US disclosed
US-9377685-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2016-06-28 US disclosed
US-20150147702-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO LTD (JP) 2015-05-28 US disclosed
US-20150147702-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO LTD (JP) 2015-05-28 US disclosed
US-9029070-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD (JP) 2015-05-12 US disclosed
US-9029070-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD (JP) 2015-05-12 US disclosed
US-9023585-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD (JP) 2015-05-05 US disclosed
US-20130137047-A1 METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2013-05-30 US disclosed
US-20130137047-A1 METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2013-05-30 US disclosed
US-20130115555-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2013-05-09 US disclosed
US-20130115555-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2013-05-09 US disclosed
US-20130084523-A1 RESIST COMPOSITIOIN AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2013-04-04 US disclosed
US-20130084523-A1 RESIST COMPOSITIOIN AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2013-04-04 US disclosed
US-20130078572-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2013-03-28 US disclosed
US-20130078572-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2013-03-28 US disclosed
US-20100304297-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-12-02 US disclosed
US-20050090570-A1 Composition for forming dielectric film and method for forming dielectric film or pattern using the composition SAMSUNG ELECTRONICS CO., LTD. (KR) 2005-04-28 US disclosed