Predicted protein targets (top 3)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.38 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.33 |
| ▸ | POLB | P06746 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL6359769 | 0.98 | SMN1; SMN2 (0.39) | SMN1; SMN2ALDH1A1POLB | |
| SCHEMBL31267852 | 0.94 | SMN1; SMN2 (0.39) | SMN1; SMN2ALDH1A1 | |
| SCHEMBL31267848 | 0.89 | SMN1; SMN2 (0.41) | SMN1; SMN2ALDH1A1 | |
| SCHEMBL1803997 | 0.84 | ALDH1A1 (0.37) | ALDH1A1POLB | |
| SCHEMBL6352100 | 0.77 | SMN1; SMN2 (0.43) | SMN1; SMN2ALDH1A1 | |
| SCHEMBL38953 | 0.77 | SMN1; SMN2 (0.56) | SMN1; SMN2ALDH1A1 | |
| SCHEMBL11789473 | 0.76 | SMN1; SMN2 (0.59) | SMN1; SMN2ALDH1A1POLB | |
| Water SCHEMBL7733637 | 0.74 | SMN1; SMN2 (0.54) | SMN1; SMN2ALDH1A1 | |
| Water SCHEMBL4837114 | 0.74 | SMN1; SMN2 (0.54) | SMN1; SMN2ALDH1A1 | |
| Hydrochloric Acid SCHEMBL20704047 | 0.74 | SMN1; SMN2 (0.54) | SMN1; SMN2ALDH1A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20030153188-A1 | LSI device polishing composition and method for producing LSI device | SHOWA DENKO K.K. | 2003-08-14 | — | — | US | claimed |
| US-6547843-B2 | For polishing metal layer formed of copper and a thin film formed of tantalum or tantalum nitride for large scale integration device | SHOWA DENKO K.K. (JP) | 2003-04-15 | — | — | US | claimed |
| EP-1193745-A1 | POLISHING COMPOSITE FOR USE IN LSI MANUFACTURE AND METHOD OF MANUFACTURING LSI | Showa Denko K.K. (JP) | 2002-04-03 | — | — | EP | claimed |
| US-20020017064-A1 | LSI device polishing composition and method for reproducing LSI device | SHOWA DENKO K.K. (JP) | 2002-02-14 | — | — | US | claimed |
| WO-2011052759-A1 | NOVEL NITROXYL RADICAL COMPOUND AND PROCESS FOR PRODUCTION THEREOF | 国立大学法人九州大学 (JP) | 2011-05-05 | — | — | WO | disclosed |
| US-6844263-B2 | LSI device polishing composition and method for producing LSI device | SHOWA DENKO KABUSHIKI KAISHA (JP) | 2005-01-18 | — | — | US | disclosed |
| US-20030153188-A1 | LSI device polishing composition and method for producing LSI device | SHOWA DENKO K.K. | 2003-08-14 | — | — | US | disclosed |
| US-6547843-B2 | For polishing metal layer formed of copper and a thin film formed of tantalum or tantalum nitride for large scale integration device | SHOWA DENKO K.K. (JP) | 2003-04-15 | — | — | US | disclosed |
| EP-1193745-A1 | POLISHING COMPOSITE FOR USE IN LSI MANUFACTURE AND METHOD OF MANUFACTURING LSI | Showa Denko K.K. (JP) | 2002-04-03 | — | — | EP | disclosed |
| US-20020017064-A1 | LSI device polishing composition and method for reproducing LSI device | SHOWA DENKO K.K. (JP) | 2002-02-14 | — | — | US | disclosed |