SCHEMBL6354086

SCHEMBL6354086

C=C(C)C(=O)OCCNC(=O)OC1C2CC3C1OS(=O)(=O)C3C2

nearest known ligand 0.31

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
TSHR P16473 2/20 0.31
ALDH1A1 P00352 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15078259 0.92
SCHEMBL15078368 0.87
SCHEMBL7011576 0.86
SCHEMBL14870889 0.85 THRB (0.34) TSHRALDH1A1
SCHEMBL15078361 0.84 TSHR (0.32) TSHRALDH1A1
SCHEMBL12602327 0.84 TSHR (0.33) TSHRALDH1A1
SCHEMBL17589675 0.82 BCHE (0.31)
SCHEMBL7010059 0.82 THRB (0.35) TSHRALDH1A1
SCHEMBL6355842 0.82 THRB (0.32) TSHRALDH1A1
SCHEMBL15078365 0.82 TSHR (0.32) TSHRALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 24 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9927708-B2 Pattern forming process and shrink agent SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-27 US disclosed
US-9927708-B2 Pattern forming process and shrink agent SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-27 US disclosed
US-9658532-B2 Pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-05-23 US disclosed
US-9632415-B2 Pattern forming process and shrink agent SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-04-25 US disclosed
US-9632415-B2 Pattern forming process and shrink agent SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-04-25 US disclosed
US-9618850-B2 Pattern forming process and shrink agent SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-04-11 US disclosed
US-9618850-B2 Pattern forming process and shrink agent SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-04-11 US disclosed
US-20170010537-A1 PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-01-12 US disclosed
US-9507258-B2 Resin and photoresist composition comprising the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-11-29 US disclosed
US-9507258-B2 Resin and photoresist composition comprising the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-11-29 US disclosed
US-20160139512-A1 PATTERN FORMING PROCESS AND SHRINK AGENT SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-05-19 US disclosed
US-20160139512-A1 PATTERN FORMING PROCESS AND SHRINK AGENT SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-05-19 US disclosed
US-20160124312-A1 PATTERN FORMING PROCESS AND SHRINK AGENT SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-05-05 US disclosed
US-20160124312-A1 PATTERN FORMING PROCESS AND SHRINK AGENT SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-05-05 US disclosed
US-20160124313-A1 PATTERN FORMING PROCESS AND SHRINK AGENT SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-05-05 US disclosed
US-20160124313-A1 PATTERN FORMING PROCESS AND SHRINK AGENT SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-05-05 US disclosed
US-9152042-B2 Acrylic ester derivative, high-molecular compound and photoresist composition KURARAY CO., LTD. (JP) 2015-10-06 US disclosed
US-20130164675-A1 ACRYLIC ESTER DERIVATIVE, HIGH-MOLECULAR COMPOUND AND PHOTORESIST COMPOSITION KURARAY CO., LTD. (JP) 2013-06-27 US disclosed
US-20120115082-A1 RESIN AND PHOTORESIST COMPOSITION COMPRISING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-05-10 US disclosed
US-20120115082-A1 RESIN AND PHOTORESIST COMPOSITION COMPRISING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-05-10 US disclosed