Isopropylamine

Isopropylamine

SCHEMBL635472

CC(C)N.F

nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 46 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20050003977-A1 Composition for cleaning DAIKIN INDUSTRIES, LTD. (JP) 2005-01-06 US claimed
EP-1447440-A1 COMPOSITION FOR CLEANING Daikin Industries, Ltd. (JP) 2004-08-18 EP claimed
EP-4394094-A1 GALLIUM NITRIDE CRYSTAL, GALLIUM NITRIDE SUBSTRATE, AND METHOD FOR PRODUCING GALLIUM NITRIDE CRYSTAL Mitsubishi Chemical Corporation (JP) 2024-07-03 EP disclosed
US-20240191395-A1 GALLIUM NITRIDE CRYSTAL, GALLIUM NITRIDE SUBSTRATE, AND METHOD FOR PRODUCING GALLIUM NITRIDE CRYSTAL MITSUBISHI CHEMICAL CORPORATION (JP) 2024-06-13 US disclosed
CN-117897521-A Gallium nitride crystal, gallium nitride substrate, and method for producing gallium nitride crystal 三菱化学株式会社 2024-04-16 CN disclosed
EP-4299801-A1 GALLIUM NITRIDE CRYSTAL, GALLIUM NITRIDE SUBSTRATE, AND METHOD FOR PRODUCING GALLIUM NITRIDE SUBSTRATE Mitsubishi Chemical Corporation (JP) 2024-01-03 EP disclosed
US-20230392280-A1 GALLIUM NITRIDE CRYSTAL, GALLIUM NITRIDE SUBSTRATE, AND METHOD FOR PRODUCING GALLIUM NITRIDE SUBSTRATE MITSUBISHI CHEMICAL CORPORATION (JP) 2023-12-07 US disclosed
CN-116917558-A Gallium nitride crystal, gallium nitride substrate, and method for producing gallium nitride substrate 三菱化学株式会社 2023-10-20 CN disclosed
WO-2023027077-A1 GALLIUM NITRIDE CRYSTAL, GALLIUM NITRIDE SUBSTRATE, AND METHOD FOR PRODUCING GALLIUM NITRIDE CRYSTAL 三菱ケミカル株式会社 2023-03-02 WO disclosed
WO-2022181755-A1 GALLIUM NITRIDE CRYSTAL, GALLIUM NITRIDE SUBSTRATE, AND METHOD FOR PRODUCING GALLIUM NITRIDE SUBSTRATE 三菱ケミカル株式会社 2022-09-01 WO disclosed
US-10501865-B2 Method for producing nitride single crystal using nitrogen-containing solvent, mineralizer having fluorine atom, and raw material MITSUBISHI CHEMICAL CORPORATION (JP) 2019-12-10 US disclosed
EP-0789668-A1 SYNTHESIS OF CRYSTALLINE POROUS SOLIDS IN AMMONIA THE DOW CHEMICAL COMPANY (US) 1997-08-20 EP disclosed
US-5599520-A REACTING AMMONIA, HYDROCARBYLAMMONIUM POLYSILICATES, METAL OXIDES, MINERALIZERS DOW CHEMICAL COMPANY, THE 1997-02-04 US disclosed
US-5589153-A Synthesis of crystalline porous solids in ammonia THE DOW CHEMICAL COMPANY (US) 1996-12-31 US disclosed
EP-0613450-B1 PROCESS OF GROWING CRYSTALLINE MICROPOROUS SOLIDS IN A FLUORIDE-CONTAINING, SUBSTANTIALLY NON-AQUEOUS GROWTH MEDIUM DOW CHEMICAL CO (US) 1996-10-02 EP disclosed
WO-1996014269-A1 SYNTHESIS OF CRYSTALLINE POROUS SOLIDS IN AMMONIA THE DOW CHEMICAL COMPANY (US) 1996-05-17 WO disclosed
EP-0613450-A1 PROCESS OF GROWING CRYSTALLINE MICROPOROUS SOLIDS IN A FLUORIDE-CONTAINING, SUBSTANTIALLY NON-AQUEOUS GROWTH MEDIUM. DOW CHEMICAL CO (US) 1994-09-07 EP disclosed
US-5320822-A Process of growing crystalline microporous solids in a fluoride-containing, substantially non-aqueous growth medium THE DOW CHEMICAL COMPANY (US) 1994-06-14 US disclosed
WO-1993010044-A1 PROCESS OF GROWING CRYSTALLINE MICROPOROUS SOLIDS IN A FLUORIDE-CONTAINING, SUBSTANTIALLY NON-AQUEOUS GROWTH MEDIUM THE DOW CHEMICAL COMPANY (US) 1993-05-27 WO disclosed
EP-0078956-A1 Process for making 5-oxohexane nitrile HOECHST AKTIENGESELLSCHAFT (DE) 1983-05-18 EP disclosed