Predicted protein targets (top 3)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HRH3 | Q9Y5N1 | 17/20 | 0.63 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.47 |
| ▸ | TERT | O14746 | 2/20 | 0.44 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL14020723 | 0.90 | HRH3 (0.60) | HRH3SMN1; SMN2 | |
| SCHEMBL11626430 | 0.85 | HRH3 (0.55) | HRH3TERT | |
| SCHEMBL24757605 | 0.85 | HRH3 (0.55) | HRH3 | |
| SCHEMBL489181 | 0.83 | HRH3 (0.64) | HRH3SMN1; SMN2 | |
| SCHEMBL489180 | 0.83 | HRH3 (0.64) | HRH3SMN1; SMN2 | |
| SCHEMBL16480467 | 0.82 | HRH3 (0.55) | HRH3 | |
| SCHEMBL12809484 | 0.80 | HRH3 (0.60) | HRH3TERT | |
| SCHEMBL9489055 | 0.80 | HRH3 (0.60) | HRH3TERT | |
| SCHEMBL20814097 | 0.80 | SMN1; SMN2 (0.49) | HRH3SMN1; SMN2 | |
| SCHEMBL6922946 | 0.80 | SMN1; SMN2 (0.45) | HRH3SMN1; SMN2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9410951-B2 | Method for producing substrate for making microarray | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-08-09 | — | — | US | disclosed |
| CN-101477307-B | Photomask blank, resist pattern forming process, and photomask preparation process | SHIN ETSU EHEMICAL CO LTD | 2012-12-12 | — | — | CN | disclosed |
| CN-101625524-B | Photoresist composition and pattern forming method | SHINETSU CHEMICAL CO JP | 2012-11-28 | — | — | CN | disclosed |
| CN-102591152-A | Resist composition and patterning process | SHIN ETSU EHEMICAL CO LTD | 2012-07-18 | — | — | CN | disclosed |
| CN-102520581-A | Method for forming photoresist pattern | SHINETSU CHEMICAL CO | 2012-06-27 | — | — | CN | disclosed |
| CN-101625524-A | Photoresist composition and pattern forming method | SHINETSU CHEMICAL CO | 2010-01-13 | — | — | CN | disclosed |
| CN-100578358-C | Resist polymer, resist composition and patterning manufacturing process | SHINETSU CHEMICAL CO | 2010-01-06 | — | — | CN | disclosed |
| CN-101477307-A | Photomask blank, resist pattern forming process, and photomask preparation process | SHINETSU CHEMICAL CO (JP) | 2009-07-08 | — | — | CN | disclosed |
| CN-1607461-A | Resist polymer, resist composition and patterning process | SHINETSU CHEMICAL CO (JP) | 2005-04-20 | — | — | CN | disclosed |
| US-20050079440-A1 | Novel polymer, positive resist composition, and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2005-04-14 | — | — | US | disclosed |