SCHEMBL6364689

SCHEMBL6364689

C[Si](C)(C)O[Si](C)(C#Cc1ccccc1)C#Cc1ccccc1

nearest known ligand 0.44

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
APP P05067 1/20 0.44
GRM5 P41594 7/20 0.40
NPC1 O15118 3/20 0.40
RAB9A P51151 3/20 0.40
SMN1; SMN2 Q16637 2/20 0.40
CYP1A2 P05177 2/20 0.40
CYP3A4 P08684 2/20 0.40
CYP2C9 P11712 2/20 0.40
CYP2C19 P33261 2/20 0.40
THPO P40225 2/20 0.40
KDM4E B2RXH2 2/20 0.40
ALDH1A1 P00352 2/20 0.40
MEN1 O00255 1/20 0.40
TP53 P04637 1/20 0.40
CYP2D6 P10635 1/20 0.40
PKM P14618 1/20 0.40
HPGD P15428 1/20 0.40
ALOX15 P16050 1/20 0.40
KMT2A Q03164 1/20 0.40
GRIN2B Q13224 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6564060 0.81 APP (0.46) APPGRM5NPC1RAB9ASMN1; SMN2
SCHEMBL15700221 0.78 APP (0.48) APPGRM5NPC1RAB9ASMN1; SMN2
SCHEMBL6561443 0.76 APP (0.41) APPGRM5NPC1RAB9ASMN1; SMN2
SCHEMBL3885779 0.75 APP (0.55) APPGRM5NPC1RAB9ASMN1; SMN2
SCHEMBL10606190 0.75 APP (0.55) APPGRM5NPC1RAB9ASMN1; SMN2
SCHEMBL563613 0.75 APP (0.55) APPGRM5NPC1RAB9ASMN1; SMN2
SCHEMBL6564285 0.73 APP (0.42) APPGRM5NPC1RAB9ASMN1; SMN2
SCHEMBL6561422 0.73 NPSR1 (0.41) APPGRM5NPC1RAB9ASMN1; SMN2
Diphenylacetylene SCHEMBL3842452 0.73 APP (0.60) APPGRM5NPC1RAB9ASMN1; SMN2
SCHEMBL6564353 0.72 APP (0.46) APPGRM5NPC1RAB9ASMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6884571-B2 Intermediate layer composition for three-layer resist process and pattern formation method using the same FUJI PHOTO FILM CO., LTD (JP) 2005-04-26 US disclosed
US-20030207208-A1 Intermediate layer composition for three-layer resist process and pattern formation method using the same FUJI PHOTO FILM CO., LTD. 2003-11-06 US disclosed