⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Hydrochloric Acid SCHEMBL28133244 | 0.97 | ALDH1A1 (0.31) | — | |
| SCHEMBL14460716 | 0.81 | CES1 (0.34) | — | |
| SCHEMBL14133213 | 0.79 | — | — | |
| SCHEMBL26112672 | 0.78 | ALDH1A1 (0.35) | — | |
| SCHEMBL16449885 | 0.78 | — | — | |
| SCHEMBL656000 | 0.75 | — | — | |
| SCHEMBL28558721 | 0.75 | TSHR (0.35) | — | |
| SCHEMBL29433272 | 0.75 | TSHR (0.35) | — | |
| SCHEMBL10231875 | 0.75 | PTGS1 (0.32) | — | |
| SCHEMBL64334 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20240231230-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM | NISSAN CHEMICAL CORPORATION (JP) | 2024-07-11 | — | — | US | disclosed |
| US-9632415-B2 | Pattern forming process and shrink agent | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-04-25 | — | — | US | disclosed |
| US-9618850-B2 | Pattern forming process and shrink agent | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-04-11 | — | — | US | disclosed |
| US-9436093-B2 | Pattern forming process and shrink agent | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-09-06 | — | — | US | disclosed |
| US-20160139512-A1 | PATTERN FORMING PROCESS AND SHRINK AGENT | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-05-19 | — | — | US | disclosed |
| US-20160124312-A1 | PATTERN FORMING PROCESS AND SHRINK AGENT | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-05-05 | — | — | US | disclosed |
| US-20160124313-A1 | PATTERN FORMING PROCESS AND SHRINK AGENT | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-05-05 | — | — | US | disclosed |
| US-20160006010-A1 | NEGATIVE ELECTRODE FOR SECONDARY BATTERY, METHOD FOR PRODUCING SAME, AND SECONDARY BATTERY USING SAME | NEC CORPORATION (JP) | 2016-01-07 | — | — | US | disclosed |
| US-8173354-B2 | Sulfonium salt, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-05-08 | — | — | US | disclosed |
| US-20110008735-A1 | SULFONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-01-13 | — | — | US | disclosed |