SCHEMBL64029

SCHEMBL64029

C1CCC(N(C2CCCC2)C2CCCC2)C1

nearest known ligand 0.42

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
ADH1A P07327 9/20 0.42
ADH1C P00326 7/20 0.42
ADH4 P08319 1/20 0.40
ALDH1A1 P00352 1/20 0.36
PHGDH O43175 2/20 0.35
ADH1B P00325 1/20 0.32
FDPS P14324 1/20 0.32
FAAH O00519 1/20 0.32
MGLL Q99685 1/20 0.32
THRB P10828 1/20 0.31
MEN1 O00255 1/20 0.31
KMT2A Q03164 1/20 0.31
TSHR P16473 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL19591971 0.96 ADH1A (0.43) ADH1AADH1CADH4ALDH1A1PHGDH
SCHEMBL19592023 0.96 ADH1A (0.43) ADH1AADH1CADH4ALDH1A1PHGDH
SCHEMBL19591979 0.96 ADH1A (0.43) ADH1AADH1CADH4ALDH1A1PHGDH
SCHEMBL19591972 0.96 ADH1A (0.43) ADH1AADH1CADH4ALDH1A1PHGDH
SCHEMBL97243 0.96 ADH1A (0.43) ADH1AADH1CADH4ALDH1A1PHGDH
SCHEMBL11277355 0.96 ADH1A (0.43) ADH1AADH1CADH4ALDH1A1PHGDH
SCHEMBL65968 0.96 ADH1A (0.43) ADH1AADH1CADH4ALDH1A1PHGDH
SCHEMBL19997015 0.96 ADH1A (0.43) ADH1AADH1CADH4ALDH1A1PHGDH
SCHEMBL21289754 0.96 ADH1A (0.43) ADH1AADH1CADH4ALDH1A1PHGDH
SCHEMBL99438 0.96 ADH1A (0.43) ADH1AADH1CADH4ALDH1A1PHGDH

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1514 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-4607278-A1 CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT Ycchem Co., Ltd. (KR) 2025-08-27 EP claimed
US-20250199405-A1 CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT YCCHEM CO., LTD. (KR) 2025-06-19 US claimed
CN-119998727-A Chemically amplified positive resist composition for improving pattern profile and enhancing etch resistance YC化学制品株式会社 2025-05-13 CN claimed
WO-2024085293-A1 CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT 영창케미칼 주식회사 2024-04-25 WO claimed
CN-110590844-A Preparation method for synthesizing tenofovir alafenamide by two-step method 江西农业大学 2019-12-20 CN claimed
CN-110551153-A Preparation method for synthesizing tenofovir alafenamide by three-step method UNIV JIANGXI AGRICULTURAL 2019-12-10 CN claimed
US-10113049-B2 Thermoplastic resin composition NIPPON NYUKAZAI CO., LTD. (JP) 2018-10-30 US claimed
US-9796800-B2 Process for producing polydienes BRIDGESTONE CORPORATION (JP) 2017-10-24 US claimed
US-9371347-B2 dppf-like compounds and method of manufacture and use BROWN UNIVERSITY (US) 2016-06-21 US claimed
US-20160108153-A1 PROCESS FOR PRODUCING POLYDIENES BRIDGESTONE CORPORATION (JP) 2016-04-21 US claimed
WO-2012040026-A1 PROCESS FOR PRODUCING POLYDIENES BRIDGESTONE CORPORATION (JP) 2012-03-29 WO claimed
US-7727707-B2 Barrier film material and pattern formation method using the same PANASONIC CORPORATION (JP) 2010-06-01 US claimed
US-7135273-B2 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2006-11-14 US claimed
US-20060127812-A1 Barrier film material and pattern formation method using the same MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2006-06-15 US claimed
EP-1669804-A2 Barrier film material and pattern formation method using the same Matsushita Electric Industries Co., Ltd. (JP) 2006-06-14 EP claimed
WO-2005100020-A2 PRIMER-LESS ABRASION COATING FOR ORGANIC GLASS ARTICLES VISION-EASE LENS (US) 2005-10-27 WO claimed
US-20050238882-A1 Primer-less abrasion coating for organic glass articles VISION-EASE LENS 2005-10-27 US claimed
CN-1574218-A Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (JP) 2005-02-02 CN claimed
US-20040259040-A1 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-12-23 US claimed
US-4759861-A Consists of an aliphatic mono- or di-carboxylic acid, a dimer or trimer of said dicarboxylic acid, petroleum sulfonic acid and naphthenic acid or salt NIPPON OIL CO., LTD. (JP) 1988-07-26 US claimed