Formic Acid

Formic Acid

SCHEMBL6424029

O=CO.[Co].[NaH]

nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Formic Acid SCHEMBL9120482 0.94 ALDH1A1 (0.33)
Formic Acid SCHEMBL27416087 0.94
Formic Acid SCHEMBL9060586 0.94 ALDH1A1 (0.33)
Formic Acid SCHEMBL76540 0.94
Formic Acid SCHEMBL1014001 0.94
Formic Acid SCHEMBL8140631 0.94 ALDH1A1 (0.33)
Formic Acid SCHEMBL115257 0.94
Formic Acid SCHEMBL9802363 0.94 ALDH1A1 (0.33)
Formic Acid SCHEMBL25389190 0.88
Formic Acid SCHEMBL8367150 0.88

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20050130844-A1 Metal oxide semiconductor thin film and method of producing the same NATIONAL INST. OF ADVANCED IND. SCIENCE AND TECH. (JP) 2005-06-16 US claimed
US-20030122122-A1 Metal oxide semiconductor thin film and method of producing the same NATIONAL INST. OF ADVANCED IND. SCIENCE AND TECH (JP) 2003-07-03 US claimed
EP-1324398-A2 Metal oxide semiconductor thin film and method of producing the same National Institute of Advanced Industrial Science and Technology (JP) 2003-07-02 EP claimed
US-20050130844-A1 Metal oxide semiconductor thin film and method of producing the same NATIONAL INST. OF ADVANCED IND. SCIENCE AND TECH. (JP) 2005-06-16 US disclosed
US-20030122122-A1 Metal oxide semiconductor thin film and method of producing the same NATIONAL INST. OF ADVANCED IND. SCIENCE AND TECH (JP) 2003-07-03 US disclosed
EP-1324398-A2 Metal oxide semiconductor thin film and method of producing the same National Institute of Advanced Industrial Science and Technology (JP) 2003-07-02 EP disclosed