⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL722777 | 0.72 | — | — | |
| SCHEMBL6901784 | 0.72 | — | — | |
| SCHEMBL1893749 | 0.69 | — | — | |
| SCHEMBL2134870 | 0.67 | — | — | |
| SCHEMBL5140236 | 0.67 | — | — | |
| SCHEMBL10295068 | 0.67 | — | — | |
| SCHEMBL6971914 | 0.67 | — | — | |
| SCHEMBL8586068 | 0.67 | — | — | |
| SCHEMBL3802600 | 0.67 | — | — | |
| SCHEMBL6841508 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-6858195-B2 | Process for forming a low dielectric constant fluorine and carbon-containing silicon oxide dielectric material | LSI LOGIC CORPORATION (US) | 2005-02-22 | — | — | US | disclosed |
| US-20020119315-A1 | Process for forming a low dielectric constant fluorine and carbon-containing silicon oxide dielectric material characterized by improved resistance to oxidation | HILCO PATENT ACQUISITION 56, LLC | 2002-08-29 | — | — | US | disclosed |
| US-6365528-B1 | PROVIDING REACTOR HAVING A SEMICONDUCTOR SUBSTRATE MOUNTED ON A SUBSTRATE SUPPORT; FORMINGFLUORINE AND CARBON-CONTAINING SILICON OXIDE DIELECTRIC MATERIAL BY REACTING TOGETHER: OXIDIZER AND SILANE COMPOUND | LSI LOGIC CORPORATION | 2002-04-02 | — | — | US | disclosed |