SCHEMBL644074

SCHEMBL644074

OC(CCCS)(C(F)(F)F)C(F)(F)F

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14085977 0.92
SCHEMBL6526666 0.90
SCHEMBL14085975 0.82
SCHEMBL5844557 0.75
SCHEMBL1760755 0.74 SMN1; SMN2 (0.32)
SCHEMBL4827981 0.72 ALDH1A1 (0.32)
SCHEMBL21839068 0.72
SCHEMBL18091021 0.72
SCHEMBL16970940 0.72 SMN1; SMN2 (0.30)
SCHEMBL2616357 0.72 CES1 (0.39)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 233 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260086458-A1 RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, COMPOUND, AND POLYMER COMPOUND TOKYO OHKA KOGYO CO LTD (JP) 2026-03-26 US disclosed
US-20260086457-A1 RESIST COMPOSITION AND RESIST PATTERN FORMATION METHOD TOKYO OHKA KOGYO CO LTD (JP) 2026-03-26 US disclosed
US-20260079395-A1 RESIST COMPOSITION, RESIST PATTERN FORMING METHOD, COMPOUND AND ACID DIFFUSION CONTROL AGENT TOKYO OHKA KOGYO CO LTD (JP) 2026-03-19 US disclosed
US-20260079394-A1 RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, COMPOUND AND ACID DIFFUSION CONTROL AGENT TOKYO OHKA KOGYO CO LTD (JP) 2026-03-19 US disclosed
EP-4707928-A1 COMPOSITION FOR FORMING SURFACE-MODIFIED LAYER, AND METHOD FOR FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2026-03-11 EP disclosed
US-12566376-B2 Resist composition and resist pattern forming method TOKYO OHKA KOGYO CO., LTD. (JP) 2026-03-03 US disclosed
US-20260050211-A1 RESIST COMPOSITION, RESIST PATTERN FORMING METHOD, COMPOUND, AND INTERMEDIATE THEREOF TOKYO OHKA KOGYO CO LTD (JP) 2026-02-19 US disclosed
US-20250390017-A1 RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, COMPOUND, AND ACID GENERATION AGENT TOKYO OHKA KOGYO CO LTD (JP) 2025-12-25 US disclosed
US-12498635-B2 Resist composition, method of forming resist pattern, and compound TOKYO OHKA KOGYO CO., LTD. (JP) 2025-12-16 US disclosed
US-20250355354-A1 RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN TOKYO OHKA KOGYO CO LTD (JP) 2025-11-20 US disclosed
US-20070161764-A1 Novel thiol compound, copolymer and method for producing the copolymer YAMAGISHI TAKANORI 2007-07-12 US disclosed
US-20070161764-A1 Novel thiol compound, copolymer and method for producing the copolymer YAMAGISHI TAKANORI 2007-07-12 US disclosed
US-7220808-B2 Thiol compound, copolymer and method for producing the copolymer MARUZEN PETROCHEMICAL CO. LTD. (JP) 2007-05-22 US disclosed
US-7220808-B2 Thiol compound, copolymer and method for producing the copolymer MARUZEN PETROCHEMICAL CO. LTD. (JP) 2007-05-22 US disclosed
US-20070111137-A1 Resist polymer solution and process for producing the same MARUZEN PETROCHEMICAL CO., LTD. (JP) 2007-05-17 US disclosed
US-20070065748-A1 Resin for photoresist composition, photoresist composition and method for forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2007-03-22 US disclosed
US-20070065748-A1 Resin for photoresist composition, photoresist composition and method for forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2007-03-22 US disclosed
US-7045582-B2 Preparation process of copolymer for semiconductor lithography and a copolymer for semiconductor lithography available by this process MARUZEN PETROCHEMICAL CO. LTD. (JP) 2006-05-16 US disclosed
US-20050131184-A1 Preparation process of copolymer for semiconductor lithography and a copolymer for semiconductor lithography available by this process MARUZEN PETROCHEMICAL CO., LTD. (JP) 2005-06-16 US disclosed
US-20050096447-A1 Production process of copolymer for semiconductor lithography MARUZEN PETROCHEMICAL CO., LTD. (JP) 2005-05-05 US disclosed