⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL42699 | 0.94 | — | — | |
| SCHEMBL11356945 | 0.94 | — | — | |
| SCHEMBL8503530 | 0.94 | — | — | |
| SCHEMBL8529454 | 0.94 | — | — | |
| SCHEMBL17262 | 0.94 | — | — | |
| SCHEMBL355458 | 0.88 | — | — | |
| SCHEMBL8558807 | 0.88 | — | — | |
| Lithium Ion SCHEMBL10405727 | 0.88 | — | — | |
| SCHEMBL913498 | 0.88 | — | — | |
| SCHEMBL7225807 | 0.88 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 133 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-114631198-A | Electronic devices including metal oxide materials and related methods and systems | 美光科技公司 | 2022-06-14 | — | — | CN | claimed |
| US-20130015518-A1 | SEMICONDUCTOR MEMORY DEVICE | KABUSHIKI KAISHA TOSHIBA (JP) | 2013-01-17 | — | — | US | claimed |
| US-8252674-B2 | Transistors with multilayered dielectric films and methods of manufacturing such transistors | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2012-08-28 | — | — | US | claimed |
| US-20110287622-A1 | Transistors with Multilayered Dielectric Films and Methods of Manufacturing Such Transistors | LIM HA-JIN (KR) | 2011-11-24 | — | — | US | claimed |
| CN-102197459-A | Vapor deposition method for ternary compounds | APPLIED MATERIALS INC | 2011-09-21 | — | — | CN | claimed |
| US-8013402-B2 | Transistors with multilayered dielectric films | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2011-09-06 | — | — | US | claimed |
| WO-2010062582-A2 | VAPOR DEPOSITION METHOD FOR TERNARY COMPOUNDS | APPLIED MATERIALS, INC. (US) | 2010-06-03 | — | — | WO | claimed |
| US-20100102417-A1 | VAPOR DEPOSITION METHOD FOR TERNARY COMPOUNDS | APPLIED MATERIALS, INC. (US) | 2010-04-29 | — | — | US | claimed |
| US-20100025781-A1 | Transistors with Multilayered Dielectric Films and Methods of Manufacturing Such Transistors | LIM HA-JIN | 2010-02-04 | — | — | US | claimed |
| US-7078310-B1 | Method for fabricating a high density composite MIM capacitor with flexible routing in semiconductor dies | NEWPORT FAB, LLC (US) | 2006-07-18 | — | — | US | claimed |
| US-7041569-B1 | Method for fabricating a high density composite MIM capacitor with reduced voltage dependence in semiconductor dies | NEWPORT FAB, LLC (US) | 2006-05-09 | — | — | US | claimed |
| US-20060081948-A1 | Transistors with multilayered dielectric films and methods of manufacturing such transistors | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2006-04-20 | — | — | US | claimed |
| WO-2004095582-A1 | A HIGH DENSITY MIM CAPACITOR WITH REDUCED VOLTAGE DEPENDENCE IN SEMICONDUCTOR DIES | NEWPORT FAB, LLC DBA JAZZ SEMICONDUCTOR (US) | 2004-11-04 | — | — | WO | claimed |
| US-6777777-B1 | High density composite MIM capacitor with flexible routing in semiconductor dies | NEWPORT FAB, LLC | 2004-08-17 | — | — | US | claimed |
| US-6680521-B1 | High density composite MIM capacitor with reduced voltage dependence in semiconductor dies | NEWPORT FAB, LLC | 2004-01-20 | — | — | US | claimed |
| WO-2024129544-A1 | POST-TREATMENT FOR REMOVING RESIDUES FROM DIELECTRIC SURFACE | APPLIED MATERIALS, INC. (US) | 2024-06-20 | — | — | WO | disclosed |
| US-20240194605-A1 | POST-TREATMENT FOR REMOVING RESIDUES FROM DIELECTRIC SURFACE | APPLIED MATERIALS, INC. | 2024-06-13 | — | — | US | disclosed |
| US-6777777-B1 | High density composite MIM capacitor with flexible routing in semiconductor dies | NEWPORT FAB, LLC | 2004-08-17 | — | — | US | disclosed |
| US-6680521-B1 | High density composite MIM capacitor with reduced voltage dependence in semiconductor dies | NEWPORT FAB, LLC | 2004-01-20 | — | — | US | disclosed |
| US-20030235961-A1 | Cyclical sequential deposition of multicomponent films | APPLIED MATERIALS, INC. | 2003-12-25 | — | — | US | disclosed |