SCHEMBL645392

SCHEMBL645392

O[Si](O)(O)O.[AlH3].[NaH].[Zn]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Water SCHEMBL5112005 0.94
Water SCHEMBL5553256 0.94
SCHEMBL2504863 0.94
SCHEMBL2553380 0.93
SCHEMBL10354486 0.93
SCHEMBL790595 0.93
SCHEMBL11669488 0.86
SCHEMBL9614296 0.86
SCHEMBL524428 0.86
Hydrogen Sulfide SCHEMBL21352579 0.86

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 17 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-103497713-B Adhesive composition 考里安国际公司 2018-07-17 CN disclosed
US-8120843-B1 Dark channel array with scattering centers HRL LABORATORIES, LLC (US) 2012-02-21 US disclosed
US-20110211598-A1 Fiber-Based Ultrafast Laser POLARONYX, INC. (US) 2011-09-01 US disclosed
US-7949217-B2 Selectively enhancing angular beam deflection FUJITSU LIMITED (JP) 2011-05-24 US disclosed
US-7889776-B2 High-power semiconductor laser TRUMPF PHOTONICS INC. (US) 2011-02-15 US disclosed
US-7700270-B1 Double-bragg-grating scanning transmitter/receiver UNIVERSITY OF CENTRAL FLORIDA RESEARCH FOUNDATION, INC. (US) 2010-04-20 US disclosed
US-20090285245-A1 FIBER-BASED ULTRAFAST LASER LIU JIAN 2009-11-19 US disclosed
US-20090274409-A1 Selectively Enhancing Angular Beam Deflection FUJITSU LIMITED (JP) 2009-11-05 US disclosed
US-7532392-B1 Dark channel array HRL LABORATORIES (US) 2009-05-12 US disclosed
US-20080253421-A1 High-Power Semiconductor Laser TRUMPF PHOTONICS INC. 2008-10-16 US disclosed
EP-1726071-A4 HIGH-POWER SEMICONDUCTOR LASER TRUMPF PHOTONICS INC (US) 2008-03-26 EP disclosed
US-7326500-B1 Sensitization of photo-thermo-refractive glass to visible radiation by two-step illumination UNIVERSITY OF CENTRAL FLORIDA RESEARCH FOUNDATION, INC. (US) 2008-02-05 US disclosed
EP-1726071-A2 HIGH-POWER SEMICONDUCTOR LASER Trumpf Photonics, Inc. (US) 2006-11-29 EP disclosed
WO-2006025849-A2 HIGH-POWER SEMICONDUCTOR LASER TRUMPF PHOTONICS, INC. (US) 2006-03-09 WO disclosed
US-6673497-B2 VOLUME HOLOGRAPHIC OPTICAL ELEMENT HAVING AN ABSOLUTE DIFFRACTION EFFICIENCY OF GREATER THAN APPROXIMATELY 50%. UNIVERSITY OF CENTRAL FLORIDA 2004-01-06 US disclosed
US-6586141-B1 Proposed for the volume diffractive element (Bragg grating) fabrication in photosensitive silicate glasses doped with silver, cerium, fluorine, and bromine. The process employs a photo-thermo-refractive (PTR) glass of high purity exposed uv UNIVERSITY OF CENTRAL FLORIDA 2003-07-01 US disclosed
US-20020045104-A1 High efficiency volume diffractive elements in photo-thermo-refractive glass UNIVERSITY OF CENTRAL FLORIDA RESEARCH FOUNDATION, INC. 2002-04-18 US disclosed