SCHEMBL64669

SCHEMBL64669

O=[SiH][SiH3]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4520004 0.61
SCHEMBL9901675 0.61
SCHEMBL6519556 0.55
SCHEMBL6519554 0.55
SCHEMBL733360 0.50
SCHEMBL9388785 0.50
SCHEMBL5420343 0.50
SCHEMBL590264 0.50
SCHEMBL3802203 0.50
SCHEMBL20267772 0.50

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 747 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-120160734-A Hemispherical double-shaft torque sensor 四川国软科技集团有限公司 2025-06-17 CN claimed
CN-120160735-A Differential type circular torque sensor 四川国软科技集团有限公司 2025-06-17 CN claimed
CN-114787304-B Shallow trench isolation chemical mechanical planarization polishing of low oxide trench recesses 弗萨姆材料美国有限责任公司 2024-06-18 CN claimed
EP-4323470-A1 ETCHING SOLUTION FOR SELECTIVELY REMOVING SILICON-GERMANIUM ALLOY FROM A SILICON-GERMANIUM/ SILICON STACK DURING MANUFACTURE OF A SEMICONDUCTOR DEVICE Versum Materials US, LLC (US) 2024-02-21 EP claimed
CN-112086516-B Semiconductor-on-insulator structure and total dose radiation resisting reinforcement method thereof 中国科学院微电子研究所 2024-01-19 CN claimed
EP-4286926-A1 METHOD FOR MANUFACTURING A PHOTONIC CHIP Commissariat à l'énergie atomique et aux énergies alternatives (FR) 2023-12-06 EP claimed
CN-112349329-B EEPROM memory cell structure compatible with standard CMOS process 北京工业大学 2023-06-30 CN claimed
US-11670539-B2 Method of making a semiconductor arrangement TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2023-06-06 US claimed
WO-2022131103-A1 ELECTRONIC APPARATUS AND METHOD FOR MANUFACTURING ELECTRONIC APPARATUS ソニーセミコンダクタソリューションズ株式会社 2022-06-23 WO claimed
US-20220130866-A1 Silicon-On-Oxide-On-Silicon BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM 2022-04-28 US claimed
CN-101930940-B Semiconductor shallow trench isolation method CSMC SEMICONDUCTOR CO LTD 2014-01-01 CN claimed
CN-103035560-A Method for restraining boron impurities expanding in P-shaped pseudo buried layer SHANGHAI HUAHONG NEC ELECT CO 2013-04-10 CN claimed
CN-101930940-A Semiconductor shallow trench isolation method CSMC SEMICONDUCTOR CO LTD 2010-12-29 CN claimed
US-20080054228-A1 DOPED NITRIDE FILM, DOPED OXIDE FILM AND OTHER DOPED FILMS GLOBALFOUNDRIES U.S. INC. 2008-03-06 US claimed
US-20060222869-A1 Electropen lithography ENERGY, UNITED STATES DEPARTMENT 2006-10-05 US claimed
US-6593589-B1 Semiconductor nitride structures THE UNIVERSITY OF NEW MEXICO 2003-07-15 US claimed
US-6479350-B1 Reduced masking step CMOS transistor formation using removable amorphous silicon sidewall spacers ADVANCED MICRO DEVICES, INC. 2002-11-12 US claimed
US-6107143-A Method for forming a trench isolation structure in an integrated circuit SAMSUNG ELECTRONICS CO., LTD. (KR) 2000-08-22 US claimed
EP-0652591-B1 Method of forming a radiation-hardened silicon-on-insulator semiconductor device IBM (US) 1999-12-22 EP claimed
EP-0062334-B1 FLEXIBLE POLYMER FILM WITH VAPOR IMPERMEABLE COATING OPTICAL COATING LABORATORY, INC. (US) 1988-01-20 EP claimed