⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL648232 | 0.97 | — | — | |
| SCHEMBL1263415 | 0.97 | — | — | |
| SCHEMBL4290647 | 0.81 | — | — | |
| SCHEMBL6537191 | 0.81 | — | — | |
| SCHEMBL26973337 | 0.79 | TSHR (0.35) | — | |
| SCHEMBL647577 | 0.70 | — | — | |
| SCHEMBL5071637 | 0.69 | — | — | |
| SCHEMBL645521 | 0.68 | — | — | |
| SCHEMBL11504848 | 0.68 | FFAR3 (0.35) | — | |
| SCHEMBL647574 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 178 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20240231230-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM | NISSAN CHEMICAL CORPORATION (JP) | 2024-07-11 | — | — | US | disclosed |
| US-20240213072-A1 | LAMINATE, RELEASE AGENT COMPOSITION, AND METHOD FOR MANUFACTURING PROCESSED SEMICONDUCTOR SUBSTRATE | NISSAN CHEMICAL CORPORATION (JP) | 2024-06-27 | — | — | US | disclosed |
| WO-2024116915-A1 | ADHESIVE SHEET HAVING RELEASE SHEET | 日東電工株式会社 | 2024-06-06 | — | — | WO | disclosed |
| WO-2024063044-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM | 日産化学株式会社 | 2024-03-28 | — | — | WO | disclosed |
| WO-2024019064-A1 | SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING POLYFUNCTIONAL SULFONIC ACID | 日産化学株式会社 | 2024-01-25 | — | — | WO | disclosed |
| EP-4310157-A1 | LAMINATE, RELEASE AGENT COMPOSITION, AND METHOD FOR MANUFACTURING MACHINED SEMICONDUCTOR SUBSTRATE | Nissan Chemical Corporation (JP) | 2024-01-24 | — | — | EP | disclosed |
| EP-4309893-A1 | LAMINATE, RELEASE AGENT COMPOSITION, AND METHOD FOR PRODUCING PROCESSED SEMICONDUCTOR SUBSTRATE | Nissan Chemical Corporation (JP) | 2024-01-24 | — | — | EP | disclosed |
| WO-2024009993-A1 | METHOD OF MANUFACTURING LAMINATE AND METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT | 日産化学株式会社 | 2024-01-11 | — | — | WO | disclosed |
| WO-2024004323-A1 | CURABLE COMPOSITION | 日産化学株式会社 | 2024-01-04 | — | — | WO | disclosed |
| US-11815815-B2 | Composition for forming silicon-containing resist underlayer film removable by wet process | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2023-11-14 | — | — | US | disclosed |
| US-20030077461-A1 | Stacked film, insulating film and substrate for semiconductor | JSR CORPORATION (JP) | 2003-04-24 | — | — | US | disclosed |
| US-20030064303-A1 | Composition having refractive index sensitively changeable by radiation and method for forming refractive index pattern | JSR CORPORATION (JP) | 2003-04-03 | — | — | US | disclosed |
| US-6465368-B2 | DISSOLVING POLYMER IN SOLVENT; FORMING DIELECTRIC FILMS | JSR CORPORATION (JP) | 2002-10-15 | — | — | US | disclosed |
| EP-1235104-A1 | COMPOSITION HAVING REFRACTIVE INDEX SENSITIVELY CHANGEABLE BY RADIATION AND METHOD FOR FORMING REFRACTIVE INDEX PATTERN | JSR Corporation (JP) | 2002-08-28 | — | — | EP | disclosed |
| US-6406794-B1 | POLYETHERSILOXANE COPOLYMER | JSR CORPORATION (JP) | 2002-06-18 | — | — | US | disclosed |
| US-20010051446-A1 | Method of manufacturing insulating film-forming material, the insulating film-forming material, and insulating film | JSR CORPORATION (JP) | 2001-12-13 | — | — | US | disclosed |
| US-20010009936-A1 | Method of manufacturing material for forming insulating film | JSR CORPORATION (JP) | 2001-07-26 | — | — | US | disclosed |
| EP-1117102-A2 | Method of manufacturing material for forming insulating film | JSR Corporation (JP) | 2001-07-18 | — | — | EP | disclosed |
| US-6235101-B1 | SILICON HYDROLYZATE, METAL CHELATE, ORGANIC SOLVENT AND BETA DIKETONE FOR FILMS | JSR CORPORATION (JP) | 2001-05-22 | — | — | US | disclosed |
| EP-1045290-A2 | Composition for resist underlayer film and method for producing the same | JSR Corporation (JP) | 2000-10-18 | — | — | EP | disclosed |