⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL24058 | 0.89 | — | — | |
| SCHEMBL30089771 | 0.80 | — | — | |
| SCHEMBL9562195 | 0.80 | — | — | |
| SCHEMBL8954208 | 0.80 | — | — | |
| SCHEMBL18489985 | 0.80 | — | — | |
| SCHEMBL6821289 | 0.80 | — | — | |
| SCHEMBL9015942 | 0.80 | — | — | |
| SCHEMBL6821294 | 0.80 | — | — | |
| Potassium SCHEMBL30089768 | 0.80 | — | — | |
| SCHEMBL1299856 | 0.80 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20070049003-A1 | Semiconductor constructions and methods of forming layers | MICRON TECHNOLOGY, INC. | 2007-03-01 | — | — | US | claimed |
| CN-107400495-B | Preparation method of silazane hybrid cyanate adhesive | 中国科学院化学研究所 | 2020-02-21 | — | — | CN | disclosed |
| CN-107400496-B | Silazane hybrid cyanate adhesive | 中国科学院化学研究所 | 2020-02-18 | — | — | CN | disclosed |
| CN-108752871-B | Epoxy resin foam and preparation method thereof | INSTITUTE OF CHEMISTRY, CHINESE ACADEMY OF SCIENCES (CN) | 2019-12-06 | — | — | CN | disclosed |
| US-20120146222-A1 | Circuit Structures and Electronic Systems | MICRON SEMICONDUCTOR PRODUCTS, INC. | 2012-06-14 | — | — | US | disclosed |
| US-20120146222-A1 | Circuit Structures and Electronic Systems | MICRON SEMICONDUCTOR PRODUCTS, INC. | 2012-06-14 | — | — | US | disclosed |
| US-8120184-B2 | Semiconductor constructions and methods of forming layers | MICRON TECHNOLOGY, INC. (US) | 2012-02-21 | — | — | US | disclosed |
| US-8120184-B2 | Semiconductor constructions and methods of forming layers | MICRON TECHNOLOGY, INC. (US) | 2012-02-21 | — | — | US | disclosed |
| US-20100230813-A1 | Semiconductor Constructions and Methods of Forming Layers | MICRON SEMICONDUCTOR PRODUCTS, INC. | 2010-09-16 | — | — | US | disclosed |
| US-20100230813-A1 | Semiconductor Constructions and Methods of Forming Layers | MICRON SEMICONDUCTOR PRODUCTS, INC. | 2010-09-16 | — | — | US | disclosed |
| US-20070049004-A1 | Semiconductor constructions, and methods of forming layers | MICRON TECHNOLOGY, INC. | 2007-03-01 | — | — | US | disclosed |
| US-20070049004-A1 | Semiconductor constructions, and methods of forming layers | MICRON TECHNOLOGY, INC. | 2007-03-01 | — | — | US | disclosed |
| US-20070049003-A1 | Semiconductor constructions and methods of forming layers | MICRON TECHNOLOGY, INC. | 2007-03-01 | — | — | US | disclosed |
| US-20070049003-A1 | Semiconductor constructions and methods of forming layers | MICRON TECHNOLOGY, INC. | 2007-03-01 | — | — | US | disclosed |