Predicted protein targets (top 8)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | MEN1 | O00255 | 3/20 | 0.34 |
| ▸ | KMT2A | Q03164 | 3/20 | 0.34 |
| ▸ | DNM1 | Q05193 | 1/20 | 0.32 |
| ▸ | ADRA2A | P08913 | 1/20 | 0.32 |
| ▸ | ADRA1A | P35348 | 1/20 | 0.32 |
| ▸ | MAPT | P10636 | 1/20 | 0.31 |
| ▸ | BLM | P54132 | 1/20 | 0.31 |
| ▸ | DGKA | P23743 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL64170 | 0.88 | MEN1 (0.31) | MEN1KMT2A | |
| SCHEMBL6830730 | 0.86 | LCK (0.37) | MEN1KMT2ADNM1ADRA2AADRA1A | |
| SCHEMBL65478 | 0.86 | ALDH1A1 (0.36) | MEN1KMT2ADNM1ADRA2AADRA1A | |
| SCHEMBL65499 | 0.85 | MEN1 (0.35) | MEN1KMT2A | |
| SCHEMBL64377 | 0.84 | MEN1 (0.42) | MEN1KMT2A | |
| SCHEMBL31530031 | 0.84 | MEN1 (0.34) | MEN1KMT2ADNM1ADRA2AADRA1A | |
| SCHEMBL65099 | 0.83 | CDYL (0.39) | MEN1KMT2ADNM1ADRA2AADRA1A | |
| SCHEMBL64197 | 0.83 | MEN1 (0.32) | MEN1KMT2ADNM1MAPT | |
| SCHEMBL14182350 | 0.83 | MEN1 (0.41) | MEN1KMT2ADNM1ADRA2AADRA1A | |
| SCHEMBL14024282 | 0.83 | MEN1 (0.41) | MEN1KMT2ADNM1ADRA2AADRA1A |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 447 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-6743564-B2 | A POSITIVE RESIST FORMULATION CONSISTS OF NITRILE CONTAINING TERT-AMINE COMPOUND, AN ORGANIC SOLVENT AND A BASE RESIN HAVING AN ACIDIC FUNCTIONAL GROUP WHICH IS PROTECTED WITH AN ACID LABILE GROUP, A PHOTOACID GENERATOR | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-06-01 | — | — | US | claimed |
| EP-4660703-A2 | METAL-CONTAINING FILM PATTERNING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2025-12-10 | — | — | EP | disclosed |
| US-20250372377-A1 | METAL-CONTAINING FILM PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-12-04 | — | — | US | disclosed |
| US-12032287-B2 | Resist material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-07-09 | — | — | US | disclosed |
| US-11994798-B2 | Resist material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-05-28 | — | — | US | disclosed |
| US-20210063871-A1 | RESIST MATERIAL AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2021-03-04 | — | — | US | disclosed |
| US-20210063873-A1 | RESIST MATERIAL AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2021-03-04 | — | — | US | disclosed |
| EP-1566693-B1 | Use of a Resist Composition for Immersion Exposure and Pattern Formation Method Using the Composition | FUJIFILM CORP (JP) | 2018-05-23 | — | — | EP | disclosed |
| EP-1580598-B1 | Positive resist composition for immersion exposure and pattern-forming method using the same | FUJIFILM CORP (JP) | 2016-10-12 | — | — | EP | disclosed |
| EP-1276012-B1 | Resist patterning process | SHINETSU CHEMICAL CO (JP) | 2016-03-23 | — | — | EP | disclosed |
| US-20020168581-A1 | Silicon-containing polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-11-14 | — | — | US | disclosed |
| US-20020150835-A1 | Polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-10-17 | — | — | US | disclosed |
| US-20020132182-A1 | Polymers, resist materials, and pattern formation method | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-09-19 | — | — | US | disclosed |
| EP-1236745-A2 | Silicon-containing polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-09-04 | — | — | EP | disclosed |
| US-20020115807-A1 | Polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-08-22 | — | — | US | disclosed |
| US-20020115018-A1 | Amine compounds, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-08-22 | — | — | US | disclosed |
| US-20020115821-A1 | Polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-08-22 | — | — | US | disclosed |
| US-20020102493-A1 | Polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-08-01 | — | — | US | disclosed |
| US-20020061463-A1 | Polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-05-23 | — | — | US | disclosed |
| EP-1195390-A1 | Polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-04-10 | — | — | EP | disclosed |