SCHEMBL652852

SCHEMBL652852

CC(=CC12C=CC(CC1)C2)C(=O)O

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL11791136 0.90
SCHEMBL11791149 0.90
SCHEMBL8467795 0.80
SCHEMBL9508997 0.75 THRB (0.31)
SCHEMBL899228 0.72
SCHEMBL516933 0.72
SCHEMBL9442923 0.69
SCHEMBL676166 0.69
SCHEMBL1358477 0.69
Propene SCHEMBL8401471 0.68

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 19 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20150183912-A1 (METH)ACRYLATE DERIVATIVE, POLYMER AND PHOTORESIST COMPOSITION HAVING LACTONE STRUCTURE, AND METHOD FOR FORMING PATTERN BY USING IT NEC CORPORATION (JP) 2015-07-02 US disclosed
US-8969483-B2 (Meth)acrylate derivative, polymer and photoresist composition having lactone structure, and method for forming pattern by using it NEC CORPORATION (JP) 2015-03-03 US disclosed
US-8802783-B2 2014-08-12 US disclosed
US-8802798-B2 (Meth)acrylate derivative, polymer and photoresist composition having lactone structure, and method for forming pattern by using it NEC CORPORATION (JP) 2014-08-12 US disclosed
EP-1699850-B1 POLYMER PURIFICATION DUPONT ELECTRONIC POLYMERS L P (US) 2014-06-25 EP disclosed
US-20130122419-A1 (METH)ACRYLATE DERIVATIVE, POLYMER AND PHOTORESIST COMPOSITION HAVING LACTONE STRUCTURE, AND METHOD FOR FORMING PATTERN BY USING IT NEC CORPORATION (JP) 2013-05-16 US disclosed
US-20120178023-A1 (METH)ACRYLATE DERIVATIVE, POLYMER AND PHOTORESIST COMPOSITION HAVING LACTONE STRUCTURE, AND METHOD FOR FORMING PATTERN BY USING IT NEC CORPORATION 2012-07-12 US disclosed
US-8119751-B2 2012-02-21 US disclosed
US-20110196122-A1 (METH)ACRYLATE DERIVATIVE, POLYMER AND PHOTORESIST COMPOSITION HAVING LACTONE STRUCTURE, AND METHOD FOR FORMING PATTERN BY USING IT NEC CORPORATION 2011-08-11 US disclosed
US-20090023878-A1 (Meth)acrylate derivative, polymer and photoresist composition having lactone structure, and method for forming pattern by using it NEC CORPORATION 2009-01-22 US disclosed
US-7432035-B2 (Meth)acrylate derivative, polymer and photoresist composition having lactone structure, and method for forming pattern by using it NEC CORPORATION (JP) 2008-10-07 US disclosed
US-20070218403-A1 (Meth)acrylate derivative, polymer and photoresist composition having lactone structure, and method for forming pattern by using it NEC CORPORATION 2007-09-20 US disclosed
US-7186495-B2 (Meth) acrylate derivative, polymer and photoresist composition having lactone structure, and method for forming pattern by using it NEC CORPORATION (JP) 2007-03-06 US disclosed
US-7148320-B2 Polymer purification DUPONT ELECTRONIC POLYMERS L.P. (US) 2006-12-12 US disclosed
EP-1699850-A1 POLYMER PURIFICATION Dupont Electronic Polymers L.P. (US) 2006-09-13 EP disclosed
US-20050187377-A1 Polymer purification DUPONT ELECTRONIC POLYMERS L. P. 2005-08-25 US disclosed
WO-2005061590-A1 POLYMER PURIFICATION DUPONT ELECTRONIC POLYMERS L.P. (US) 2005-07-07 WO disclosed
US-20010026901-A1 (Meth) acrylate derivative, polymer and photoresist composition having lactone structure, and method for forming pattern by using it NEC CORPORATION (JP) 2001-10-04 US disclosed
US-6106998-A PHOTORESISTS SUITABLE FOR USE IN PHOTOLITHOGRAPHY THAT EMPLOYS AN ARF EXCIMER LASER; HIGH TRANSPARENCY TO EXPOSURE LIGHT HAVING A WAVELENGTH OF 220 NM OR LESS AND DRY-ETCH RESISTANCE NEC CORPORATION (JP) 2000-08-22 US disclosed