Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | MEN1 | O00255 | 1/20 | 0.40 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.40 |
| ▸ | ALDH1A1 | P00352 | 4/20 | 0.36 |
| ▸ | TSHR | P16473 | 5/20 | 0.35 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.33 |
| ▸ | PGR | P06401 | 1/20 | 0.30 |
| ▸ | CHRM2 | P08172 | 1/20 | 0.30 |
| ▸ | CHRM4 | P08173 | 1/20 | 0.30 |
| ▸ | HTR1A | P08908 | 1/20 | 0.30 |
| ▸ | CHRM5 | P08912 | 1/20 | 0.30 |
| ▸ | CHRM1 | P11229 | 1/20 | 0.30 |
| ▸ | CHRNB2 | P17787 | 1/20 | 0.30 |
| ▸ | CHRM3 | P20309 | 1/20 | 0.30 |
| ▸ | TBXA2R | P21731 | 1/20 | 0.30 |
| ▸ | CHRNB4 | P30926 | 1/20 | 0.30 |
| ▸ | CHRNA3 | P32297 | 1/20 | 0.30 |
| ▸ | CHRNA7 | P36544 | 1/20 | 0.30 |
| ▸ | CHRNA4 | P43681 | 1/20 | 0.30 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.30 |
| ▸ | CHRNA10 | Q9GZZ6 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL65473 | 0.87 | CYP1A2 (0.42) | ALDH1A1TSHRCYP1A2PGRCHRM2 | |
| Acetonitrile SCHEMBL1311269 | 0.87 | ALDH1A1 (0.32) | MEN1KMT2AALDH1A1 | |
| SCHEMBL65128 | 0.87 | MEN1 (0.39) | MEN1KMT2AALDH1A1TSHR | |
| SCHEMBL64223 | 0.86 | KMT2A (0.43) | MEN1KMT2AALDH1A1TSHRCYP1A2 | |
| SCHEMBL65566 | 0.85 | KMT2A (0.48) | MEN1KMT2AALDH1A1TSHRPGR | |
| SCHEMBL63503 | 0.85 | KMT2A (0.48) | MEN1KMT2AALDH1A1TSHRPGR | |
| SCHEMBL64040 | 0.84 | CYP1A2 (0.42) | ALDH1A1TSHRCYP1A2PGRCHRM2 | |
| SCHEMBL13039673 | 0.81 | MEN1 (0.42) | MEN1KMT2AALDH1A1TSHRPGR | |
| SCHEMBL65286 | 0.81 | KMT2A (0.44) | MEN1KMT2AALDH1A1TSHRCYP1A2 | |
| SCHEMBL6830195 | 0.81 | MEN1 (0.39) | MEN1KMT2ATSHR |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 456 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-6743564-B2 | A POSITIVE RESIST FORMULATION CONSISTS OF NITRILE CONTAINING TERT-AMINE COMPOUND, AN ORGANIC SOLVENT AND A BASE RESIN HAVING AN ACIDIC FUNCTIONAL GROUP WHICH IS PROTECTED WITH AN ACID LABILE GROUP, A PHOTOACID GENERATOR | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-06-01 | — | — | US | claimed |
| EP-4660703-A2 | METAL-CONTAINING FILM PATTERNING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2025-12-10 | — | — | EP | disclosed |
| US-20250372377-A1 | METAL-CONTAINING FILM PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-12-04 | — | — | US | disclosed |
| US-12032287-B2 | Resist material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-07-09 | — | — | US | disclosed |
| US-11994798-B2 | Resist material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-05-28 | — | — | US | disclosed |
| US-20210063873-A1 | RESIST MATERIAL AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2021-03-04 | — | — | US | disclosed |
| US-20210063871-A1 | RESIST MATERIAL AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2021-03-04 | — | — | US | disclosed |
| EP-1566693-B1 | Use of a Resist Composition for Immersion Exposure and Pattern Formation Method Using the Composition | FUJIFILM CORP (JP) | 2018-05-23 | — | — | EP | disclosed |
| EP-1580598-B1 | Positive resist composition for immersion exposure and pattern-forming method using the same | FUJIFILM CORP (JP) | 2016-10-12 | — | — | EP | disclosed |
| US-9410951-B2 | Method for producing substrate for making microarray | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-08-09 | — | — | US | disclosed |
| US-20020168581-A1 | Silicon-containing polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-11-14 | — | — | US | disclosed |
| US-20020150835-A1 | Polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-10-17 | — | — | US | disclosed |
| US-20020132182-A1 | Polymers, resist materials, and pattern formation method | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-09-19 | — | — | US | disclosed |
| EP-1236745-A2 | Silicon-containing polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-09-04 | — | — | EP | disclosed |
| US-20020115807-A1 | Polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-08-22 | — | — | US | disclosed |
| US-20020115018-A1 | Amine compounds, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-08-22 | — | — | US | disclosed |
| US-20020115821-A1 | Polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-08-22 | — | — | US | disclosed |
| US-20020102493-A1 | Polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-08-01 | — | — | US | disclosed |
| US-20020061463-A1 | Polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-05-23 | — | — | US | disclosed |
| EP-1195390-A1 | Polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-04-10 | — | — | EP | disclosed |