SCHEMBL65436

SCHEMBL65436

COC(=O)CCN(CCO)CCC#N

nearest known ligand 0.43

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
KMT2A Q03164 2/20 0.43
MEN1 O00255 1/20 0.43
TSHR P16473 4/20 0.39
LCK P06239 1/20 0.34
ALDH1A1 P00352 3/20 0.33
HPGD P15428 1/20 0.33
CASP1 P29466 1/20 0.33
KDM5A P29375 2/20 0.31
LMNA P02545 2/20 0.31
CA12 O43570 1/20 0.31
CA14 Q9ULX7 1/20 0.31
KDM4E B2RXH2 1/20 0.31
HTT P42858 2/20 0.30
MAPT P10636 1/20 0.30
HSD17B10 Q99714 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL64411 0.86 KMT2A (0.56) KMT2AMEN1TSHRALDH1A1KDM5A
SCHEMBL64212 0.86 KMT2A (0.56) KMT2AMEN1TSHRALDH1A1KDM5A
SCHEMBL64377 0.85 MEN1 (0.42) KMT2AMEN1TSHRLCKALDH1A1
SCHEMBL65286 0.85 KMT2A (0.44) KMT2AMEN1TSHRALDH1A1HPGD
SCHEMBL21513123 0.84 KMT2A (0.54) KMT2AMEN1TSHRALDH1A1KDM5A
SCHEMBL12847702 0.84 KMT2A (0.54) KMT2AMEN1TSHRALDH1A1KDM5A
SCHEMBL5701701 0.82 LCK (0.38) KMT2AMEN1LCKALDH1A1HPGD
SCHEMBL65128 0.81 MEN1 (0.39) KMT2AMEN1TSHRLCKALDH1A1
SCHEMBL12847700 0.80 KMT2A (0.50) KMT2AMEN1TSHRALDH1A1KDM5A
SCHEMBL16356886 0.79 KMT2A (0.48) KMT2AMEN1TSHRALDH1A1KDM5A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 459 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6743564-B2 A POSITIVE RESIST FORMULATION CONSISTS OF NITRILE CONTAINING TERT-AMINE COMPOUND, AN ORGANIC SOLVENT AND A BASE RESIN HAVING AN ACIDIC FUNCTIONAL GROUP WHICH IS PROTECTED WITH AN ACID LABILE GROUP, A PHOTOACID GENERATOR SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-06-01 US claimed
EP-4660703-A2 METAL-CONTAINING FILM PATTERNING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2025-12-10 EP disclosed
US-20250372377-A1 METAL-CONTAINING FILM PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-12-04 US disclosed
US-12032287-B2 Resist material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-07-09 US disclosed
US-11994798-B2 Resist material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-05-28 US disclosed
US-20210063871-A1 RESIST MATERIAL AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-03-04 US disclosed
US-20210063873-A1 RESIST MATERIAL AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-03-04 US disclosed
EP-1566693-B1 Use of a Resist Composition for Immersion Exposure and Pattern Formation Method Using the Composition FUJIFILM CORP (JP) 2018-05-23 EP disclosed
EP-1580598-B1 Positive resist composition for immersion exposure and pattern-forming method using the same FUJIFILM CORP (JP) 2016-10-12 EP disclosed
US-9410951-B2 Method for producing substrate for making microarray SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-08-09 US disclosed
US-20020168581-A1 Silicon-containing polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-11-14 US disclosed
US-20020150835-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-10-17 US disclosed
US-20020132182-A1 Polymers, resist materials, and pattern formation method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-09-19 US disclosed
EP-1236745-A2 Silicon-containing polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-09-04 EP disclosed
US-20020115807-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-08-22 US disclosed
US-20020115018-A1 Amine compounds, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-08-22 US disclosed
US-20020115821-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-08-22 US disclosed
US-20020102493-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-08-01 US disclosed
US-20020061463-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-05-23 US disclosed
EP-1195390-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-04-10 EP disclosed