SCHEMBL6565638

SCHEMBL6565638

O=C(O)c1ccc(-c2ccc(C3(c4ccc(-c5ccc(C(=O)O)c(C(=O)O)c5)cc4)c4ccccc4-c4ccccc43)cc2)cc1C(=O)O

nearest known ligand 0.46

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ACMSD Q8TDX5 5/20 0.46
HNF4A P41235 2/20 0.46
MCL1 Q07820 2/20 0.46
DHFR P00374 1/20 0.46
PDK2 Q15119 4/20 0.46
KMT2A Q03164 3/20 0.45
MEN1 O00255 2/20 0.45
KDM4E B2RXH2 2/20 0.45
LMNA P02545 1/20 0.45
MAPT P10636 1/20 0.45
OPRK1 P41145 1/20 0.45
SMN1; SMN2 Q16637 1/20 0.45
POLB P06746 1/20 0.45
DCLRE1A Q6PJP8 1/20 0.42
DCLRE1B Q9H816 1/20 0.42
ESR1 P03372 1/20 0.42
ESR2 Q92731 1/20 0.42
PTPN1 P18031 2/20 0.41
CDC25B P30305 2/20 0.39
CDC25A P30304 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL301297 0.87 ESR1 (0.50) ACMSDHNF4APDK2KMT2AMEN1
SCHEMBL29441967 0.87 ESR1 (0.50) ACMSDHNF4APDK2KMT2AMEN1
SCHEMBL30445772 0.87 ESR1 (0.50) ACMSDHNF4APDK2KMT2AMEN1
SCHEMBL29485744 0.86 ESR1 (0.49) ACMSDHNF4APDK2KMT2AMEN1
SCHEMBL29512285 0.81 POLB (0.57) MCL1PDK2KMT2AMEN1KDM4E
SCHEMBL2035345 0.81 POLB (0.57) MCL1PDK2KMT2AMEN1KDM4E
SCHEMBL38651250 0.80 ESR1 (0.46) ACMSDHNF4APDK2KMT2AMEN1
SCHEMBL23302251 0.79 HNF4A (0.44) ACMSDHNF4AMCL1DHFRPDK2
SCHEMBL23302252 0.79 MCL1 (0.43) ACMSDHNF4AMCL1DHFRPDK2
SCHEMBL27182111 0.78 PDK2 (0.43) ACMSDHNF4AMCL1DHFRPDK2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240329525-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR MANUFACTURING CURED RELIEF PATTERN, AND SEMICONDUCTOR APPARATUS ASAHI KASEI KABUSHIKI KAISHA (JP) 2024-10-03 US disclosed
US-20240210827-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR MANUFACTURING CURED RELIEF PATTERN, AND SEMICONDUCTOR APPARATUS ASAHI KASEI KABUSHIKI KAISHA (JP) 2024-06-27 US disclosed
US-20200409263-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR MANUFACTURING CURED RELIEF PATTERN, AND SEMICONDUCTOR APPARATUS ASAHI KASEI KABUSHIKI KAISHA (JP) 2020-12-31 US disclosed
US-10831101-B2 Photosensitive resin composition, method for manufacturing cured relief pattern, and semiconductor apparatus ASAHI KASEI KABUSHIKI KAISHA (JP) 2020-11-10 US disclosed
US-20190113845-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR MANUFACTURING CURED RELIEF PATTERN, AND SEMICONDUCTOR APPARATUS ASAHI KASEI KABUSHIKI KAISHA (JP) 2019-04-18 US disclosed
EP-0875906-B1 Electronic part and process for manufacturing the same JSR CORP (JP) 2004-04-07 EP disclosed
US-6084053-A AS STRUCTURAL COMPONENT, A DIELECTRIC POLYIMIDE MATERIAL HAVING AT LEAST ONE FLUORENE-CONTAINING STRUCTURAL UNIT; APPLYING POLYIMIDE SOLUTION TO SUBSTRATE, AND DRYING TO FORM THE DIELECTRIC; HEAT RESISTANCE, LOW DIELECTRIC CONSTANT JSR CORPORATION (JP) 2000-07-04 US disclosed
EP-0875906-A2 Electronic part and process for manufacturing the same JSR Corporation (JP) 1998-11-04 EP disclosed