SCHEMBL66031

SCHEMBL66031

CC(=O)OC(C)COC(C)(C)C

nearest known ligand 0.48

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
MAPK1 P28482 1/20 0.48
TSHR P16473 2/20 0.47
CHRM2 P08172 1/20 0.47
CHRM4 P08173 1/20 0.47
CHRM1 P11229 1/20 0.47
TBXA2R P21731 1/20 0.47
GALR3 O60755 1/20 0.45
MAPT P10636 1/20 0.45
BLM P54132 1/20 0.45
SMN1; SMN2 Q16637 1/20 0.45
TDP1 Q9NUW8 1/20 0.35
ALOX15 P16050 1/20 0.34
TRPV1 Q8NER1 1/20 0.32
GAA P10253 1/20 0.31
GRN P28799 1/20 0.31
SORT1 Q99523 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3256468 1.00 MAPK1 (0.48) MAPK1TSHRCHRM2CHRM4CHRM1
SCHEMBL24405017 0.83 TSHR (0.44) MAPK1TSHRCHRM2CHRM4CHRM1
SCHEMBL198037 0.81 TSHR (0.45) TSHRCHRM2CHRM4CHRM1TBXA2R
SCHEMBL27646130 0.81 MAPK1 (0.46) MAPK1GRNSORT1
SCHEMBL19249804 0.81 MAPK1 (0.46) MAPK1GRNSORT1
SCHEMBL12429062 0.80 TSHR (0.46) MAPK1TSHR
SCHEMBL9443190 0.79 MAPK1 (0.45) MAPK1
SCHEMBL21757564 0.79 MAPK1 (0.45) MAPK1
SCHEMBL17905252 0.78 MAPK1 (0.43) MAPK1
SCHEMBL27646288 0.78 TSHR (0.42) MAPK1TSHRCHRM2CHRM4CHRM1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Appears in 3432 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-116003674-A Resin and preparation method of ArF wet photoresist containing resin 上海芯刻微材料技术有限责任公司 2023-04-25 CN claimed
CN-116003672-A Resin and ArF wet photoresist containing same 上海芯刻微材料技术有限责任公司 2023-04-25 CN claimed
CN-116003673-A Resin and application of ArF wet photoresist containing resin 上海芯刻微材料技术有限责任公司 2023-04-25 CN claimed
US-9846360-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-12-19 US claimed
US-9760010-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-09-12 US claimed
US-20170003590-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-01-05 US claimed
US-20160363866-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-12-15 US claimed
US-9069245-B2 Near-infrared absorptive layer-forming composition and multilayer film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-06-30 US claimed
US-8623590-B2 Pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-01-07 US claimed
US-20120108043-A1 PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-05-03 US claimed
US-6730451-B2 FLUOROACRYLATE POLYMERS; TRANSPARENCY; PREVENTING NEGATIVE WORKING; LOW ABSORPTION OF FLUORINE EXCIMER LASER LIGHT; HIGH TRANSMITTANCE TO VACUUM ULTRAVIOLET RADITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-05-04 US claimed
US-20260147275-A1 ONIUM SALT, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-05-28 US disclosed
US-20260147274-A1 SULFONIUM SALT TYPE MONOMER, POLYMER, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-05-28 US disclosed
EP-4749364-A1 ONIUM SALT, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2026-05-27 EP disclosed
EP-4749365-A1 CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2026-05-27 EP disclosed
EP-0908783-A1 Resist compositions, their preparation and use for patterning processes SHIN-ETSU CHEMICAL CO., LTD. (JP) 1999-04-14 EP disclosed
EP-0887705-A1 Resist compositions SHIN-ETSU CHEMICAL CO., LTD. (JP) 1998-12-30 EP disclosed
EP-0723007-B1 Azeotrope and azeotrope-like compositions of octamethyltrisiloxane DOW CORNING (US) 1998-10-28 EP disclosed
EP-0520103-A1 Synthesis of hydroxyl-terminated diene oligomers TEXACO CHEMICAL COMPANY (US) 1992-12-30 EP disclosed
US-5159123-A Synthesis of hydroxyl-terminated polybutadienes using glycol ether acetate solvents TEXACO CHEMICAL COMPANY (US) 1992-10-27 US disclosed