Acetonitrile

Acetonitrile

SCHEMBL66092

CC#N.N#CCNCCCOC=O

nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Acetonitrile SCHEMBL64131 0.88 CA12 (0.31)
SCHEMBL6728711 0.84
Acetonitrile SCHEMBL66242 0.77
Acetonitrile SCHEMBL4075616 0.76 ALDH1A1 (0.32)
Acetonitrile SCHEMBL64108 0.74 ALDH1A1 (0.44)
SCHEMBL1960121 0.71 TSHR (0.46)
SCHEMBL5351289 0.70
SCHEMBL12391588 0.69 TSHR (0.38)
SCHEMBL5348722 0.69
Acetonitrile SCHEMBL64993 0.69 MEN1 (0.30)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 427 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6743564-B2 A POSITIVE RESIST FORMULATION CONSISTS OF NITRILE CONTAINING TERT-AMINE COMPOUND, AN ORGANIC SOLVENT AND A BASE RESIN HAVING AN ACIDIC FUNCTIONAL GROUP WHICH IS PROTECTED WITH AN ACID LABILE GROUP, A PHOTOACID GENERATOR SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-06-01 US claimed
US-12032287-B2 Resist material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-07-09 US disclosed
US-20210063873-A1 RESIST MATERIAL AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-03-04 US disclosed
EP-1566693-B1 Use of a Resist Composition for Immersion Exposure and Pattern Formation Method Using the Composition FUJIFILM CORP (JP) 2018-05-23 EP disclosed
EP-1580598-B1 Positive resist composition for immersion exposure and pattern-forming method using the same FUJIFILM CORP (JP) 2016-10-12 EP disclosed
EP-1276012-B1 Resist patterning process SHINETSU CHEMICAL CO (JP) 2016-03-23 EP disclosed
EP-1698937-B1 Positive resist composition and pattern-forming method using the same FUJIFILM CORP (JP) 2015-12-23 EP disclosed
EP-2244124-B1 Patterning process SHINETSU CHEMICAL CO (JP) 2015-08-26 EP disclosed
EP-2105794-B1 Novel photoacid generator, resist composition, and patterning process SHINETSU CHEMICAL CO (JP) 2015-08-19 EP disclosed
EP-2244126-B1 Patterning process SHINETSU CHEMICAL CO (JP) 2015-08-19 EP disclosed
US-20020197559-A1 Polymers, resist compositions and patterning process, novel tetrahydrofuran compounds and their preparation SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-12-26 US disclosed
US-20020168581-A1 Silicon-containing polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-11-14 US disclosed
US-20020150835-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-10-17 US disclosed
EP-1236745-A2 Silicon-containing polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-09-04 EP disclosed
US-20020115807-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-08-22 US disclosed
US-20020115018-A1 Amine compounds, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-08-22 US disclosed
US-20020115821-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-08-22 US disclosed
US-20020102493-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-08-01 US disclosed
US-20020061463-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-05-23 US disclosed
EP-1195390-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-04-10 EP disclosed