⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Silicate SCHEMBL8459578 | 0.94 | — | — | |
| Silicate SCHEMBL6014331 | 0.94 | — | — | |
| Silicate SCHEMBL21111528 | 0.94 | — | — | |
| Silicate SCHEMBL11144732 | 0.94 | — | — | |
| Silicate SCHEMBL3613884 | 0.88 | — | — | |
| Silicate SCHEMBL22687582 | 0.88 | — | — | |
| Silicate SCHEMBL6744995 | 0.88 | — | — | |
| Silicate SCHEMBL37071 | 0.88 | — | — | |
| Silicate SCHEMBL5513074 | 0.88 | — | — | |
| Silicate SCHEMBL1368102 | 0.88 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 80 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20250048641-A1 | MEMORY DEVICE INCLUDING HAFNIUM OR ZIRCONIUM OXIDE CONTAINING BLOCKING DIELECTRIC AND TUNGSTEN NITRIDE BARRIER AND METHODS OF FORMING THE SAME | SanDisk Technologies, Inc. | 2025-02-06 | — | — | US | claimed |
| WO-2025029358-A1 | MEMORY DEVICE INCLUDING HAFNIUM OR ZIRCONIUM OXIDE CONTAINING BLOCKING DIELECTRIC AND TUNGSTEN NITRIDE BARRIER AND METHODS OF FORMING THE SAME | SanDisk Technologies, Inc. (US) | 2025-02-06 | — | — | WO | claimed |
| US-20220376176-A1 | METHODS OF FORMING ELECTRONIC DEVICES COMPRISING METAL OXIDE MATERIALS | MICRON TECHNOLOGY INC (US) | 2022-11-24 | — | — | US | claimed |
| US-11444243-B2 | Electronic devices comprising metal oxide materials and related methods and systems | MICRON TECHNOLOGY, INC. (US) | 2022-09-13 | — | — | US | claimed |
| EP-4052297-A1 | ELECTRONIC DEVICES COMPRISING METAL OXIDE MATERIALS AND RELATED METHODS AND SYSTEMS | Micron Technology, Inc. (US) | 2022-09-07 | — | — | EP | claimed |
| CN-114631198-A | Electronic devices including metal oxide materials and related methods and systems | 美光科技公司 | 2022-06-14 | — | — | CN | claimed |
| US-20210126193-A1 | ELECTRONIC DEVICES COMPRISING METAL OXIDE MATERIALS AND RELATED METHODS AND SYSTEMS | MICRON TECHNOLOGY, INC. | 2021-04-29 | — | — | US | claimed |
| US-20170069711-A1 | CAPACITOR AND A SEMICONDUCTOR DEVICE INCLUDING THE SAME | SAMSUNG ELECTRONICS CO., LTD (KR) | 2017-03-09 | — | — | US | claimed |
| US-9577028-B2 | Semiconductor device including a capacitor | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2017-02-21 | — | — | US | claimed |
| US-20160358998-A1 | SEMICONDUCTOR DEVICE INCLUDING A CAPACITOR | SAMSUNG ELECTRONICS CO., LTD (KR) | 2016-12-08 | — | — | US | claimed |
| US-8313994-B2 | Method for forming a high-K gate stack with reduced effective oxide thickness | TOKYO ELECTRON LIMITED (JP) | 2012-11-20 | — | — | US | claimed |
| WO-2011031591-A1 | PULSED CHEMICAL VAPOR DEPOSITION OF METAL-SILICON-CONTAINING FILMS | TOKYO ELECTRON LIMITED (JP) | 2011-03-17 | — | — | WO | claimed |
| US-20110065287-A1 | PULSED CHEMICAL VAPOR DEPOSITION OF METAL-SILICON-CONTAINING FILMS | TOKYO ELECTRON LIMITED (JP) | 2011-03-17 | — | — | US | claimed |
| US-20100261342-A1 | SEMICONDUCTOR DEVICE CONTAINING A BURIED THRESHOLD VOLTAGE ADJUSTMENT LAYER AND METHOD OF FORMING | TOKYO ELECTRON LIMITED (JP) | 2010-10-14 | — | — | US | claimed |
| US-20100248464-A1 | METHOD FOR FORMING A HIGH-k GATE STACK WITH REDUCED EFFECTIVE OXIDE THICKNESS | TOKYO ELECTRON LIMITED (JP) | 2010-09-30 | — | — | US | claimed |
| WO-2010111453-A1 | METHOD FOR FORMING A HIGH-K GATE STACK WITH REDUCED EFFECTIVE OXIDE THICKNESS | TOKYO ELECTRON LIMITED (JP) | 2010-09-30 | — | — | WO | claimed |
| US-7652341-B2 | Semiconductor apparatus having a semicondutor element with a high dielectric constant film | KABUSHIKI KAISHA TOSHIBA (JP) | 2010-01-26 | — | — | US | claimed |
| US-20090085175-A1 | SEMICONDUCTOR DEVICE CONTAINING A BURIED THRESHOLD VOLTAGE ADJUSTMENT LAYER AND METHOD OF FORMING | TOKYO ELECTRON LIMITED (JP) | 2009-04-02 | — | — | US | claimed |
| US-20080054378-A1 | Semiconductor apparatus and method of manufacturing the semiconductor apparatus | KABUSHIKI KAISHA TOSHIBA | 2008-03-06 | — | — | US | claimed |
| US-7265427-B2 | Semiconductor apparatus and method of manufacturing the semiconductor apparatus | KABUSHIKI KAISHA TOSHIBA (JP) | 2007-09-04 | — | — | US | claimed |