SCHEMBL677322

SCHEMBL677322

C[CH]c1c(CC(C)C)cccc1CC(C)C

nearest known ligand 0.56

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
GABRA1 P14867 3/20 0.56
GABRB2 P47870 3/20 0.56
ELANE P08246 1/20 0.33
CTSG P08311 1/20 0.33
SLC6A2 P23975 2/20 0.32
TAAR1 Q96RJ0 2/20 0.32
SIGMAR1 Q99720 2/20 0.32
MAOA P21397 1/20 0.32
SLC6A4 P31645 1/20 0.32
SLC6A3 Q01959 1/20 0.32
CYP2A6 P11509 1/20 0.32
ADORA2A P29274 1/20 0.32
ADORA1 P30542 1/20 0.32
GAA P10253 1/20 0.30
CDK1 P06493 1/20 0.30
CDK2 P24941 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29249256 0.84 GABRA1 (0.58) GABRA1GABRB2ELANECTSGSLC6A2
SCHEMBL954574 0.80 GABRA1 (0.54) GABRA1GABRB2ELANECTSGTAAR1
SCHEMBL2922173 0.78 GABRA1 (0.38) GABRA1GABRB2SLC6A2SIGMAR1SLC6A4
SCHEMBL2921819 0.76 GABRA1 (0.48) GABRA1GABRB2SLC6A2TAAR1SIGMAR1
SCHEMBL953300 0.75 GABRA1 (0.48) GABRA1GABRB2ELANECTSG
SCHEMBL677034 0.75 GABRA1 (0.48) GABRA1GABRB2
SCHEMBL952740 0.75 GABRA1 (0.53) GABRA1GABRB2ELANECTSGCDK1
SCHEMBL840750 0.75 GABRA1 (0.64) GABRA1GABRB2SLC6A2TAAR1SIGMAR1
SCHEMBL23527437 0.73 GABRA1 (0.62) GABRA1GABRB2SLC6A2TAAR1SIGMAR1
SCHEMBL2743774 0.73 GABRA1 (0.62) GABRA1GABRB2ELANECTSGSLC6A2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 23 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9090722-B2 Chemical amplification resist composition, and mold preparation method and resist film using the same FUJIFILM CORPORATION (JP) 2015-07-28 US disclosed
EP-1367439-B1 Radiation-sensitive composition FUJIFILM CORP (JP) 2012-08-01 EP disclosed
US-20120006788-A1 CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME FUJIFILM CORPORATION (JP) 2012-01-12 US disclosed
EP-2399168-A1 CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME FUJIFILM Corporation (JP) 2011-12-28 EP disclosed
WO-2010150917-A1 CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME FUJIFILM CORPORATION (JP) 2010-12-29 WO disclosed
EP-1467251-B1 Positive resist composition FUJIFILM CORP (JP) 2010-09-08 EP disclosed
EP-1465010-B1 Positive resist composition FUJIFILM CORP (JP) 2009-10-21 EP disclosed
US-20080096130-A1 POSITIVE RESIST COMPOSITION FUJIFILM CORPORATION 2008-04-24 US disclosed
US-7361446-B2 Sensitivity, high resolution, good pattern profile, used for super-microlithography FUJIFILM CORPORATION (JP) 2008-04-22 US disclosed
US-7250246-B2 Positive resist composition and pattern formation method using the same FUJIFILM CORPORATION (JP) 2007-07-31 US disclosed
EP-1557720-A1 Positive resist composition and pattern formation method using the same FUJI PHOTO FILM CO., LTD. (JP) 2005-07-27 EP disclosed
EP-1467251-A1 Positive resist composition Fuji Photo Film Co., Ltd. (JP) 2004-10-13 EP disclosed
US-20040197702-A1 Positive resist composition FUJI PHOTO FILM CO., LTD. 2004-10-07 US disclosed
EP-1465010-A1 Positive resist composition FUJI PHOTO FILM CO., LTD. (JP) 2004-10-06 EP disclosed
US-6727033-B2 A POSITIVE RESIST COMPOSITION COMPRISING A RESIN (A), WHICH IS DECOMPOSED BY THE ACTION OF AN ACID TO INCREASE SOLUBILITY IN AN ALKALI DEVELOPING SOLUTION, CONTAINING A STRUCTURAL UNIT INCLUDING A GROUP REPRESENTED BY FORMULA (X) DEFINED IN FUJI PHOTO FILM CO., LTD. (JP) 2004-04-27 US disclosed
US-6692883-B2 GENERATING ACID; ADJUSTMENT SOLUBILITY IN ALKLAINE DEVELOPER FUJI PHOTO FILM CO., LTD. (JP) 2004-02-17 US disclosed
EP-1367439-A1 Radiation-sensitive composition FUJI PHOTO FILM CO., LTD. (JP) 2003-12-03 EP disclosed
US-6630280-B1 Resin and compound that generates an arylsulfonic acid when exposed to actinic radiation; sensitivity; resolution; smoothness FUJI PHOTO FILM CO., LTD. (JP) 2003-10-07 US disclosed
US-20030134221-A1 Positive resist composition FUJI PHOTO FILM CO., LTD. 2003-07-17 US disclosed
US-20020012866-A1 Positive photoresist composition FUJIFILM CORPORATION (JP) 2002-01-31 US disclosed