SCHEMBL6830008

SCHEMBL6830008

FC(F)(F)c1ssc1C(F)(F)F

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4575535 0.62
SCHEMBL10600250 0.53 NOTUM (0.30)
SCHEMBL2966317 0.49
SCHEMBL31532230 0.49
SCHEMBL1334575 0.49
SCHEMBL23617 0.49
Water SCHEMBL18979260 0.46
Bromide SCHEMBL5108256 0.46
SCHEMBL5513240 0.46
Lithium SCHEMBL31206119 0.46

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 33 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260136848-A1 DEPOSITION OF METAL-CONTAINING FILMS LAM RES CORP (US) 2026-05-14 US disclosed
US-20250382703-A1 PLASMA ENHANCED LOW TEMPERATURE ATOMIC LAYER DEPOSITION OF METALS LAM RES CORP (US) 2025-12-18 US disclosed
WO-2025217071-A1 ISONITRILE INHIBITORS IN ALD LAM RESEARCH CORPORATION (US) 2025-10-16 WO disclosed
WO-2025129090-A1 INTEGRATED PROCESS FOR METALLIZATION LAM RESEARCH CORPORATION (US) 2025-06-19 WO disclosed
EP-4544095-A1 PLASMA ENHANCED LOW TEMPERATURE ATOMIC LAYER DEPOSITION OF METALS LAM Research Corporation (US) 2025-04-30 EP disclosed
WO-2025059038-A1 MOLYBDENUM IN LOGIC BEOL METALLIZATION LAM RESEARCH CORPORATION (US) 2025-03-20 WO disclosed
US-20250069948-A1 DEPOSITION OF METALS IN RECESSED FEATURES WITH THE USE OF HALOGEN-CONTAINING DEPOSITION INHIBITORS LAM RESEARCH CORPORATION (US) 2025-02-27 US disclosed
US-20250038003-A1 LOW TEMPERATURE MOLYBDENUM DEPOSITION ASSISTED BY SILICON-CONTAINING REACTANTS LAM RESEARCH CORPORATION (US) 2025-01-30 US disclosed
WO-2025019214-A1 DEPOSITION OF METAL-CONTAINING FILMS USING HALOGEN-CONTAINING ACTIVATOR MOLECULES LAM RESEARCH CORPORATION (US) 2025-01-23 WO disclosed
CN-119194406-A Precursor for depositing molybdenum-containing film 朗姆研究公司 2024-12-27 CN disclosed
US-20190148167-A1 ETCHING GAS MIXTURE, METHOD OF FORMING PATTERN BY USING THE SAME, AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE BY USING THE ETCHING GAS MIXTURE Wonik Materials (KR) 2019-05-16 US disclosed
CN-105378960-B Electrode surface modification layer for electronic devices 剑桥显示技术有限公司 2018-09-18 CN disclosed
US-9793504-B2 Electrode surface modification layer for electronic devices CAMBRIDGE DISPLAY TECHNOLOGY LIMITED (GB) 2017-10-17 US disclosed
US-20160149147-A1 ELECTRODE SURFACE MODIFICATION LAYER FOR ELECTRONIC DEVICES CAMBRIDGE DISPLAY TECHNOLOGY LIMITED (GB) 2016-05-26 US disclosed
WO-2008061517-A2 USE OF DITHIOL TRANSITION METAL COMPLEXES AND COMPOUNDS ANALOGOUS TO SELENIUM AS DOPANTS NOVALED AG (DE) 2008-05-29 WO disclosed
US-6743960-B2 CONTACTING AN OLEFINIC MONOMERS FEED WITH A CATALYST CONTAINING A BIS/DITHIOALKYL OR ARYL/METAL(A LATE TRANSITION METAL) OR DERIVATIVES AND AN ACTIVATING CATALYST, OLIGOMERIZING THE MONOMER TO FORM AN OLIGOMER PRODUCT EXXONMOBIL RESEARCH AND ENGINEERING COMPANY 2004-06-01 US disclosed
US-20030105374-A1 Method for oligomerizing olefins to form higher olefins using sulfur-containing and sulfur-tolerant catalysts EXXONMOBIL CHEMICAL PATENTS INC. 2003-06-05 US disclosed
EP-1169286-A2 THE USE OF METAL DITHIOLENE COMPLEXES IN SELECTIVE OLEFIN RECOVERY ExxonMobil Research and Engineering Company (US) 2002-01-09 EP disclosed
WO-2000061527-A2 THE USE OF METAL DITHIOLENE COMPLEXES IN SELECTIVE OLEFIN RECOVERY EXXONMOBIL RESEARCH AND ENGINEERING COMPANY (US) 2000-10-19 WO disclosed
US-6120692-A Use of metal dithiolene complexes in selective olefin recovery (law760) EXXON RESEARCH AND ENGINEERING COMPANY (US) 2000-09-19 US disclosed