Ronnel

Ronnel

SCHEMBL6832096

COP(=S)(OC)Oc1cc(Cl)c(Cl)cc1Cl.[SiH4]

nearest known ligand 0.51

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Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TDP1 Q9NUW8 3/20 0.51
MEN1 O00255 1/20 0.51
KMT2A Q03164 1/20 0.51
NPC1 O15118 1/20 0.39
LMNA P02545 2/20 0.37
GAA P10253 1/20 0.35
TAAR1 Q96RJ0 1/20 0.34
ALDH1A1 P00352 6/20 0.34
CYP3A4 P08684 3/20 0.34
HSD17B10 Q99714 3/20 0.34
TSHR P16473 2/20 0.34
HTT P42858 1/20 0.34
MAPK1 P28482 3/20 0.33
MAPT P10636 2/20 0.33
ALOX15 P16050 1/20 0.33
ALOX12 P18054 1/20 0.33
ATM Q13315 1/20 0.33
L3MBTL1 Q9Y468 1/20 0.33
HSP90AA1 P07900 1/20 0.33
PKM P14618 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Ronnel SCHEMBL29375404 0.98 TDP1 (0.53) TDP1MEN1KMT2ANPC1LMNA
Ronnel SCHEMBL3272218 0.98 TDP1 (0.53) TDP1MEN1KMT2ANPC1LMNA
Ronnel SCHEMBL19438 0.98 TDP1 (0.53) TDP1MEN1KMT2ANPC1LMNA
Ronnel SCHEMBL6736758 0.98 TDP1 (0.53) TDP1MEN1KMT2ANPC1LMNA
Ronnel SCHEMBL11879973 0.98 TDP1 (0.53) TDP1MEN1KMT2ANPC1LMNA
Ronnel SCHEMBL713515 0.96 TDP1 (0.51) TDP1MEN1KMT2ANPC1LMNA
Ronnel SCHEMBL8927417 0.96 TDP1 (0.51) TDP1MEN1KMT2ANPC1LMNA
Ronnel SCHEMBL11798525 0.96 TDP1 (0.51) TDP1MEN1KMT2ANPC1LMNA
Ronnel SCHEMBL9178207 0.96 TDP1 (0.51) TDP1MEN1KMT2ANPC1LMNA
Ronnel SCHEMBL8143453 0.96 TDP1 (0.51) TDP1MEN1KMT2ANPC1LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1410432-A1 AL PROCESSING FOR IMPURITY GETTERING IN SILICON Midwest Research Institute (US) 2004-04-21 EP disclosed
WO-2001067503-A1 A1 PROCESSING FOR IMPURITY GETTERING IN SILICON MIDWEST RESEARCH INSTITUTE (US) 2001-09-13 WO disclosed
US-H1637-H Laser-assisted fabrication of bipolar transistors in silicon-on-sapphire (SOS) UNITED STATES OF AMERICA, THE, AS REPRESENTED BY THE UNITED STATES DEPARTMENT OF ENERGY 1997-03-04 US disclosed