SCHEMBL683429

SCHEMBL683429

COC(C)OCCOc1ccc(C2CCCCC2)cc1

nearest known ligand 0.56

Predicted protein targets (top 9)

geneUniProtsupporting neighboursconfidence
HRH3 Q9Y5N1 15/20 0.55
KCNH2 Q12809 4/20 0.55
CYP2C9 P11712 5/20 0.44
CYP3A4 P08684 4/20 0.44
GAA P10253 1/20 0.40
ALDH1A1 P00352 2/20 0.40
MAPT P10636 1/20 0.40
SMN1; SMN2 Q16637 1/20 0.40
KDM4E B2RXH2 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL683430 0.99 HRH3 (0.52) HRH3KCNH2CYP2C9CYP3A4ALDH1A1
SCHEMBL14094041 0.87 HRH3 (0.50) HRH3KCNH2CYP2C9CYP3A4GAA
SCHEMBL14461654 0.87 HRH3 (0.50) HRH3KCNH2CYP2C9CYP3A4GAA
SCHEMBL10274540 0.87 HRH3 (0.55) HRH3KCNH2CYP2C9CYP3A4GAA
SCHEMBL14443349 0.85 HRH3 (0.52) HRH3KCNH2CYP2C9CYP3A4ALDH1A1
SCHEMBL14461652 0.84 HRH3 (0.50) HRH3KCNH2CYP2C9CYP3A4ALDH1A1
SCHEMBL10228460 0.84 HRH3 (0.52) HRH3KCNH2CYP2C9CYP3A4GAA
SCHEMBL14118168 0.83 HRH3 (0.49) HRH3KCNH2CYP2C9CYP3A4ALDH1A1
SCHEMBL13898474 0.83 HRH3 (0.51) HRH3KCNH2CYP2C9CYP3A4ALDH1A1
SCHEMBL683155 0.83 KDM4E (0.42) HRH3ALDH1A1KDM4E

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9090722-B2 Chemical amplification resist composition, and mold preparation method and resist film using the same FUJIFILM CORPORATION (JP) 2015-07-28 US disclosed
US-9090722-B2 Chemical amplification resist composition, and mold preparation method and resist film using the same FUJIFILM CORPORATION (JP) 2015-07-28 US disclosed
US-20120100481-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2012-04-26 US disclosed
US-20120100481-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2012-04-26 US disclosed
US-20120006788-A1 CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME FUJIFILM CORPORATION (JP) 2012-01-12 US disclosed
US-20120006788-A1 CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME FUJIFILM CORPORATION (JP) 2012-01-12 US disclosed
WO-2010150917-A1 CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME FUJIFILM CORPORATION (JP) 2010-12-29 WO disclosed
US-20080096130-A1 POSITIVE RESIST COMPOSITION FUJIFILM CORPORATION 2008-04-24 US disclosed
US-20080096130-A1 POSITIVE RESIST COMPOSITION FUJIFILM CORPORATION 2008-04-24 US disclosed