⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL31366972 | 0.82 | — | — | |
| SCHEMBL29483314 | 0.71 | — | — | |
| Methane SCHEMBL28003568 | 0.71 | — | — | |
| SCHEMBL17317920 | 0.71 | — | — | |
| SCHEMBL2422998 | 0.71 | — | — | |
| SCHEMBL15662 | 0.71 | — | — | |
| SCHEMBL6110299 | 0.50 | — | — | |
| SCHEMBL8845249 | 0.50 | — | — | |
| Water SCHEMBL36087 | 0.50 | — | — | |
| SCHEMBL7735469 | 0.50 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-6815285-B2 | Methods of forming dual gate semiconductor devices having a metal nitride layer | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2004-11-09 | — | — | US | claimed |
| US-20040005749-A1 | Methods of forming dual gate semiconductor devices having a metal nitride layer | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2004-01-08 | — | — | US | claimed |
| US-20220178034-A1 | ELECTRODE FOR ELECTROLYSIS, AND METHOD FOR PRODUCING ELECTRODE FOR ELECTROLYSIS | PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD. (JP) | 2022-06-09 | — | — | US | disclosed |
| EP-3960905-A1 | ELECTRODE FOR ELECTROLYSIS, AND METHOD FOR PRODUCING ELECTRODE FOR ELECTROLYSIS | PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD. (JP) | 2022-03-02 | — | — | EP | disclosed |
| CN-108807880-A | A kind of gradient mixes the preparation method of niobium tungsten tantalum cobaltosic oxide | 兰州金川新材料科技股份有限公司 | 2018-11-13 | — | — | CN | disclosed |
| CN-108682848-A | A kind of preparation method for mixing niobium tungsten tantalum cobalt acid lithium | 兰州金川新材料科技股份有限公司 | 2018-10-19 | — | — | CN | disclosed |
| CN-108455686-A | A kind of preparation method for mixing niobium tungsten tantalum cobaltosic oxide | 兰州金川新材料科技股份有限公司 | 2018-08-28 | — | — | CN | disclosed |
| US-6815285-B2 | Methods of forming dual gate semiconductor devices having a metal nitride layer | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2004-11-09 | — | — | US | disclosed |
| US-20040005749-A1 | Methods of forming dual gate semiconductor devices having a metal nitride layer | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2004-01-08 | — | — | US | disclosed |