⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL8330981 | 0.82 | — | — | |
| SCHEMBL28626319 | 0.82 | — | — | |
| SCHEMBL6270158 | 0.82 | — | — | |
| SCHEMBL28932330 | 0.82 | — | — | |
| SCHEMBL28646052 | 0.82 | — | — | |
| SCHEMBL30494013 | 0.82 | — | — | |
| SCHEMBL15662 | 0.71 | — | — | |
| SCHEMBL19781 | 0.71 | — | — | |
| SCHEMBL7590436 | 0.71 | — | — | |
| SCHEMBL2422998 | 0.71 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 29 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-118619843-A | Theanine synthesis process | 信联电子材料科技股份有限公司 | 2024-09-10 | — | — | CN | claimed |
| CN-116425539-B | Controllable preparation method of high-energy-storage and high-electricity tantalum scandium acid lead ceramic under low electric field | 湘潭大学 | 2024-08-23 | — | — | CN | claimed |
| CN-118507254-A | High-energy-storage-density lead scandium tantalate and strontium titanate laminated composite film and preparation method thereof | 湘潭大学 | 2024-08-16 | — | — | CN | claimed |
| CN-116425539-A | Controllable preparation method of high-energy-storage and high-electricity tantalum scandium acid lead ceramic under low electric field | 湘潭大学 | 2023-07-14 | — | — | CN | claimed |
| CN-109503161-A | A kind of scandium tantalum codope type bismuth niobate rubidium piezoceramic material and preparation method thereof | 赵娟 | 2019-03-22 | — | — | CN | claimed |
| US-5677559-A | Electric circuit and method for forming the same | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 1997-10-14 | — | — | US | claimed |
| JP-9323945-A | — | — | None | — | — | JP | disclosed |
| CN-120280281-A | Lead scandium tantalate film with high energy storage and high electric card performance and preparation method thereof | 湘潭大学 | 2025-07-08 | — | — | CN | disclosed |
| CN-118619843-A | Theanine synthesis process | 信联电子材料科技股份有限公司 | 2024-09-10 | — | — | CN | disclosed |
| CN-116425539-B | Controllable preparation method of high-energy-storage and high-electricity tantalum scandium acid lead ceramic under low electric field | 湘潭大学 | 2024-08-23 | — | — | CN | disclosed |
| CN-116425539-B | Controllable preparation method of high-energy-storage and high-electricity tantalum scandium acid lead ceramic under low electric field | 湘潭大学 | 2024-08-23 | — | — | CN | disclosed |
| CN-116425539-B | Controllable preparation method of high-energy-storage and high-electricity tantalum scandium acid lead ceramic under low electric field | 湘潭大学 | 2024-08-23 | — | — | CN | disclosed |
| CN-118507254-A | High-energy-storage-density lead scandium tantalate and strontium titanate laminated composite film and preparation method thereof | 湘潭大学 | 2024-08-16 | — | — | CN | disclosed |
| CN-104137237-B | Nanowire structures having non-discrete source and drain regions | 英特尔公司 | 2018-10-09 | — | — | CN | disclosed |
| CN-108028274-A | Semiconductor nanowire device having cavity spacer and method of manufacturing cavity spacer of semiconductor nanowire device | 英特尔公司 | 2018-05-11 | — | — | CN | disclosed |
| CN-104241130-B | PMOS transistor and forming method thereof, semiconductor devices and forming method thereof | 中芯国际集成电路制造(上海)有限公司 | 2018-04-27 | — | — | CN | disclosed |
| CN-107810553-A | Body via capacitor is led directly on chip and its forms technology | 英特尔公司 | 2018-03-16 | — | — | CN | disclosed |
| CN-107743656-A | Resistance reduction in transistors having epitaxially grown source/drain regions | 英特尔公司 | 2018-02-27 | — | — | CN | disclosed |
| CN-103035609-B | Radio communication between the integrated circuit of arranged perpendicular in semiconductor package part | 美国博通公司 | 2016-08-24 | — | — | CN | disclosed |
| JP-H09323945-A | PRODUCTION OF INDENES | HOECHST AG | 1997-12-16 | — | — | JP | disclosed |