SCHEMBL6842047

SCHEMBL6842047

Oc1ccc(CC(Cc2ccc(O)cc2)(c2ccc(O)cc2)c2ccc(O)cc2)cc1

nearest known ligand 0.61

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
ESR1 P03372 14/20 0.61
ESR2 Q92731 12/20 0.61
ABAT P80404 1/20 0.44
LMNA P02545 1/20 0.44
TYR P14679 1/20 0.44
CYP3A4 P08684 1/20 0.44
AR P10275 1/20 0.44
HPGD P15428 1/20 0.44
TSHR P16473 1/20 0.44
SLC6A2 P23975 1/20 0.44
SLC6A4 P31645 1/20 0.44
HTR6 P50406 1/20 0.44
ESRRG P62508 1/20 0.44
SLC6A3 Q01959 1/20 0.44
HSD17B10 Q99714 1/20 0.44
BLM P54132 1/20 0.44
MEN1 O00255 1/20 0.44
KMT2A Q03164 1/20 0.44

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL68967 0.89 KIF11 (0.51) ESR1ESR2LMNACYP3A4SLC6A2
SCHEMBL9415525 0.88 ESR1 (0.52) ESR1ESR2SLC6A2BLMMEN1
SCHEMBL13410361 0.84 ESR1 (0.45) ESR1ESR2BLMMEN1KMT2A
SCHEMBL2861814 0.80 ESR1 (0.47) ESR1ESR2
SCHEMBL9240840 0.80 ESR1 (0.57) ESR1ESR2LMNATYRCYP3A4
SCHEMBL2014096 0.80 ESR1 (0.62) ESR1ESR2CYP3A4BLM
SCHEMBL156830 0.80 ESR1 (0.61) ESR1ESR2ABATLMNATYR
SCHEMBL6037693 0.79 ESR1 (0.67) ESR1ESR2LMNATYRCYP3A4
SCHEMBL311875 0.78 ESR1 (0.64) ESR1ESR2CYP3A4
SCHEMBL10770441 0.76 ESR1 (0.57) ESR1ESR2ABATLMNATYR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 74 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-5650262-A High-resolution negative photoresist with wide process latitude OLIN MICROELECTRONIC CHEMICALS, INC. 1997-07-22 US claimed
EP-0599779-A1 High-resolution negative photoresist having extended processing latitude OCG Microelectronic Materials AG (CH) 1994-06-01 EP claimed
US-20250376552-A1 RESIN COMPOSITION, CURED SUBSTANCE, LAMINATE, MANUFACTURING METHOD FOR CURED SUBSTANCE, MANUFACTURING METHOD FOR LAMINATE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJIFILM CORP (JP) 2025-12-11 US disclosed
US-20250264801-A1 RESIN COMPOSITION, CURED SUBSTANCE, LAMINATE, MANUFACTURING METHOD FOR CURED SUBSTANCE, MANUFACTURING METHOD FOR LAMINATE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJIFILM CORPORATION (JP) 2025-08-21 US disclosed
EP-4597225-A1 FILM PRODUCTION METHOD, PHOTOSENSITIVE RESIN COMPOSITION, CURED PRODUCT PRODUCTION METHOD, CURED PRODUCT, AND LAMINATE FUJIFILM Corporation (JP) 2025-08-06 EP disclosed
EP-4596607-A1 RESIN COMPOSITION, CURED OBJECT, LAYERED PRODUCT, METHOD FOR PRODUCING CURED OBJECT, METHOD FOR PRODUCING LAYERED PRODUCT, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJIFILM Corporation (JP) 2025-08-06 EP disclosed
EP-4596608-A1 RESIN COMPOSITION, CURED PRODUCT, LAMINATE, METHOD FOR PRODUCING CURED PRODUCT, METHOD FOR PRODUCING LAMINATE, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJIFILM Corporation (JP) 2025-08-06 EP disclosed
US-20250236697-A1 RESIN COMPOSITION, CURED SUBSTANCE, LAMINATE, MANUFACTURING METHOD FOR CURED SUBSTANCE, MANUFACTURING METHOD FOR LAMINATE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJIFILM CORPORATION (JP) 2025-07-24 US disclosed
US-20250230283-A1 RESIN COMPOSITION, CURED SUBSTANCE, LAMINATE, MANUFACTURING METHOD FOR CURED SUBSTANCE, MANUFACTURING METHOD FOR LAMINATE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJIFILM CORPORATION (JP) 2025-07-17 US disclosed
WO-2024185652-A1 RESIN COMPOSITION, CURED PRODUCT, MULTILAYER BODY, METHOD FOR PRODUCING CURED PRODUCT, METHOD FOR PRODUCING MULTILAYER BODY, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE 富士フイルム株式会社 2024-09-12 WO disclosed
WO-2024150700-A1 RESIN COMPOSITION, CURED ARTICLE, MULTILAYER BODY, METHOD FOR PRODUCING CURED ARTICLE, METHOD FOR PRODUCING MULTILAYER BODY, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND RESIN 富士フイルム株式会社 2024-07-18 WO disclosed
US-5620828-A Positive photoresist composition containing quinonediazide esterification product, novolak resin and pocyhydroxy alkali dissolution accelerator FUJI PHOTO FILM CO., LTD. (JP) 1997-04-15 US disclosed
EP-0766139-A1 Positive working photoresist composition FUJI PHOTO FILM CO., LTD. (JP) 1997-04-02 EP disclosed
EP-0745575-A1 Method of synthesizing polyphenol compound and positive working photoresist composition comprising polyphenol compound FUJI PHOTO FILM CO., LTD. (JP) 1996-12-04 EP disclosed
US-5340688-A Containing mixture of 1,2-naphthoquinonediazidosulfonate esters of polyhydroxy compounds and alkali soluble resin FUJI PHOTO FILM CO., LTD. (JP) 1994-08-23 US disclosed
US-5340683-A Lithographic printing plate comprising a photosensitive 2-naphthoquinonediazide-5-sulfonic acid ester of polyhydroxyphenyl/p-/alkyl; erasing FUJI PHOTO FILM CO., LTD. (JP) 1994-08-23 US disclosed
US-5318875-A Resolution; heat resistance; photosensitivity; developability; integrated circuits; semiconductors FUJI PHOTO FILM CO., LTD. (JP) 1994-06-07 US disclosed
EP-0599779-A1 High-resolution negative photoresist having extended processing latitude OCG Microelectronic Materials AG (CH) 1994-06-01 EP disclosed
EP-0555861-A1 Positive photoresist composition FUJI PHOTO FILM CO., LTD. (JP) 1993-08-18 EP disclosed
US-4394496-A POLYEPOXEDES WITH GOOD HIGH TEMPERATURE PROPERTIES THE DOW CHEMICAL COMPANY (US) 1983-07-19 US disclosed