Ethylene

Ethylene

SCHEMBL6844508

C=C.NC(=O)NC(=O)O

nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Hydrogen Peroxide SCHEMBL28780383 0.93
SCHEMBL9425846 0.93 CRBN (0.50)
SCHEMBL22493 0.93
SCHEMBL23002882 0.90
SCHEMBL4576144 0.90 CRBN (0.47)
Water SCHEMBL6337702 0.90
SCHEMBL17353590 0.90
Hydrochloric Acid SCHEMBL2672461 0.90
SCHEMBL28220720 0.90
Hydrogen Sulfide SCHEMBL28206896 0.90 CRBN (0.47)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8338080-B2 Forming a resist pattern to be thickened on an underlying object;applying a surfactant on the resist pattern to be thickened; applying a resist pattern thickening material comprising at least resin and a second surfactant on the resist pattern FUJITSU LIMITED (JP) 2012-12-25 US disclosed
US-20040110099-A1 Process for forming resist pattern, semiconductor device and fabrication thereof FUJITSU LIMITED (JP) 2004-06-10 US disclosed