⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Butyric Acid SCHEMBL320515 | 0.96 | FFAR3 (1.00) | — | |
| Butyric Acid SCHEMBL4441285 | 0.96 | FFAR3 (1.00) | — | |
| Butyric Acid SCHEMBL991717 | 0.96 | FFAR3 (1.00) | — | |
| Butyric Acid SCHEMBL1332215 | 0.96 | — | — | |
| Butyric Acid SCHEMBL339305 | 0.96 | FFAR3 (1.00) | — | |
| Butyric Acid SCHEMBL5703921 | 0.96 | FFAR3 (1.00) | — | |
| Butyric Acid SCHEMBL8458708 | 0.96 | FFAR3 (1.00) | — | |
| Butyric Acid SCHEMBL8457839 | 0.96 | FFAR3 (1.00) | — | |
| Butyric Acid SCHEMBL20678495 | 0.96 | — | — | |
| Butyric Acid SCHEMBL4446516 | 0.96 | FFAR3 (1.00) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230257651-A1 | METHOD OF PREPARING QUANTUM DOT, QUANTUM DOT PREPARED THEREBY, AND ELECTRONIC APPARATUS INCLUDING THE QUANTUM DOT | SAMSUNG DISPLAY CO., LTD. (KR) | 2023-08-17 | — | — | US | disclosed |
| CN-116590017-A | Quantum dot preparation method, quantum dot and electronic device comprising quantum dot | 三星显示有限公司 | 2023-08-15 | — | — | CN | disclosed |
| WO-2014099171-A1 | PREPARATION OF TRIALKYLINDIUM COMPOUNDS AND TRIALKYLGALLIUM COMPOUNDS | ALBEMARLE CORPORATION (US) | 2014-06-26 | — | — | WO | disclosed |
| US-6830704-B2 | Contains a Lewis acid metal salt and a compound having clathrating ability. | TOAGOSEI CO., LTD. (JP) | 2004-12-14 | — | — | US | disclosed |
| US-6770131-B2 | PREFERABLY THIN FILMS OF GALLIUM NITRIDE; DIRECT DEPOSITION OF AN AMORPHOUS LAYER OF A III-V COMPOUND PRECURSOR ON A SINGLE CRYSTAL SUBSTRATE; REACTION, CRYSTALLIZATION AND FORMATION OF FILMS BY PYROLYSIS. | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA | 2004-08-03 | — | — | US | disclosed |
| US-20030135016-A1 | Contains a Lewis acid metal salt and a compound having clathrating ability. | TOAGOSEI CO., LTD. | 2003-07-17 | — | — | US | disclosed |
| US-6547985-B1 | Adhesive mixture | TOGOSEI CO., LTD. (JP) | 2003-04-15 | — | — | US | disclosed |
| US-20030012874-A1 | III-V compound films using chemical deposition | REGENTS OF THE UNIVERSITY OF CALIFORNIA, THE | 2003-01-16 | — | — | US | disclosed |
| WO-2002040752-A2 | PROCESS FOR PRODUCING III-V COMPOUND FILMS BY CHEMICAL DEPOSITION | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA (US) | 2002-05-23 | — | — | WO | disclosed |
| US-4415440-A | PASSIVATION OF ZEOLITES POLLUTED BY METALS, E.G. NICKEL, VANADIUM, IRON | PHILLIPS PETROLEUM COMPANY (US) | 1983-11-15 | — | — | US | disclosed |
| US-4377504-A | Cracking catalyst improvement with gallium compounds | PHILLIPS PETROLEUM COMPANY (US) | 1983-03-22 | — | — | US | disclosed |