⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL685230 | 0.67 | — | — | |
| SCHEMBL17689142 | 0.64 | — | — | |
| SCHEMBL29655365 | 0.56 | — | — | |
| SCHEMBL28370472 | 0.56 | — | — | |
| SCHEMBL8777519 | 0.56 | — | — | |
| SCHEMBL2100861 | 0.56 | — | — | |
| SCHEMBL8594437 | 0.56 | — | — | |
| SCHEMBL4842857 | 0.53 | — | — | |
| SCHEMBL7743047 | 0.53 | — | — | |
| SCHEMBL27836453 | 0.53 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-110114311-A | Trans-silylation catalysis | 美国陶氏有机硅公司 | 2019-08-09 | — | — | CN | disclosed |
| CN-109790036-A | Chlorodisilazane | 美国陶氏有机硅公司 | 2019-05-21 | — | — | CN | disclosed |
| US-10043655-B2 | Plasma activated conformal dielectric film deposition | NOVELLUS SYSTEMS, INC. (US) | 2018-08-07 | — | — | US | disclosed |
| US-20170148628-A1 | PLASMA ACTIVATED CONFORMAL DIELECTRIC FILM DEPOSITION | NOVELLUS SYSTEMS INC (US) | 2017-05-25 | — | — | US | disclosed |
| US-9611544-B2 | Plasma activated conformal dielectric film deposition | NOVELLUS SYSTEMS, INC. (US) | 2017-04-04 | — | — | US | disclosed |
| US-9611544-B2 | Plasma activated conformal dielectric film deposition | NOVELLUS SYSTEMS, INC. (US) | 2017-04-04 | — | — | US | disclosed |
| US-9570274-B2 | Plasma activated conformal dielectric film deposition | NOVELLUS SYSTEMS, INC. (US) | 2017-02-14 | — | — | US | disclosed |
| US-9230800-B2 | Plasma activated conformal film deposition | NOVELLUS SYSTEMS, INC. (US) | 2016-01-05 | — | — | US | disclosed |
| US-20150206719-A1 | PLASMA ACTIVATED CONFORMAL DIELECTRIC FILM DEPOSITION | NOVELLUS SYSTEMS INC (US) | 2015-07-23 | — | — | US | disclosed |
| US-8999859-B2 | Plasma activated conformal dielectric film deposition | NOVELLUS SYSTEMS, INC. (US) | 2015-04-07 | — | — | US | disclosed |
| US-20140216337-A1 | PLASMA ACTIVATED CONFORMAL DIELECTRIC FILM DEPOSITION | NOVELLUS SYSTEMS, INC. (US) | 2014-08-07 | — | — | US | disclosed |
| US-20140209026-A1 | PLASMA ACTIVATED DEPOSITION OF A CONFORMAL FILM ON A SUBSTRATE SURFACE | NOVELLUS SYSTEMS, INC. (US) | 2014-07-31 | — | — | US | disclosed |
| US-8728955-B2 | Method of plasma activated deposition of a conformal film on a substrate surface | NOVELLUS SYSTEMS, INC. (US) | 2014-05-20 | — | — | US | disclosed |
| US-8728956-B2 | Plasma activated conformal film deposition | NOVELLUS SYSTEMS, INC. (US) | 2014-05-20 | — | — | US | disclosed |
| US-8637411-B2 | Plasma activated conformal dielectric film deposition | NOVELLUS SYSTEMS, INC. (US) | 2014-01-28 | — | — | US | disclosed |
| US-20130210241-A1 | Precursors for Plasma Activated Conformal Film Deposition | NOVELLUS SYSTEMS INC. (US) | 2013-08-15 | — | — | US | disclosed |
| US-20120028454-A1 | PLASMA ACTIVATED CONFORMAL DIELECTRIC FILM DEPOSITION | NOVELLUS SYSTEMS, INC. | 2012-02-02 | — | — | US | disclosed |
| US-20120009802-A1 | PLASMA ACTIVATED CONFORMAL DIELECTRIC FILM DEPOSITION | NOVELLUS SYSTEMS, INC. | 2012-01-12 | — | — | US | disclosed |
| US-20110256726-A1 | PLASMA ACTIVATED CONFORMAL FILM DEPOSITION | NOVELLUS SYSTEMS, INC. | 2011-10-20 | — | — | US | disclosed |
| US-20110256734-A1 | SILICON NITRIDE FILMS AND METHODS | NOVELLUS SYSTEMS, INC. | 2011-10-20 | — | — | US | disclosed |