⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Methane SCHEMBL2733621 | 1.00 | — | — | |
| Methane SCHEMBL29239565 | 0.82 | — | — | |
| Methane SCHEMBL18730667 | 0.82 | — | — | |
| Methane SCHEMBL29019444 | 0.82 | — | — | |
| Methane SCHEMBL15019237 | 0.82 | — | — | |
| Methane SCHEMBL3473088 | 0.82 | — | — | |
| Methane SCHEMBL17747999 | 0.82 | — | — | |
| Methane SCHEMBL21166664 | 0.82 | — | — | |
| Methane SCHEMBL20952335 | 0.82 | — | — | |
| Methane SCHEMBL17748000 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 596 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-119560765-A | Terahertz photoconductive antenna and manufacturing method thereof | 广州诺尔光电科技有限公司 | 2025-03-04 | — | — | CN | claimed |
| CN-118922005-A | Perovskite/crystalline silicon laminated battery and preparation method thereof | 滁州捷泰新能源科技有限公司 | 2024-11-08 | — | — | CN | claimed |
| CN-115000403-B | Negative electrode material, composite negative electrode material, preparation method of composite negative electrode material, secondary battery and terminal equipment | 华为技术有限公司 | 2024-09-24 | — | — | CN | claimed |
| CN-118202487-A | Negative electrode active material, method for preparing same, secondary battery comprising same, and electric device | 宁德时代新能源科技股份有限公司 | 2024-06-14 | — | — | CN | claimed |
| EP-4290609-A1 | NEGATIVE ELECTRODE MATERIAL, COMPOSITE NEGATIVE ELECTRODE MATERIAL AND PREPARATION METHOD THEREFOR, SECONDARY BATTERY, AND TERMINAL DEVICE | Huawei Technologies Co., Ltd. (CN) | 2023-12-13 | — | — | EP | claimed |
| CN-117199247-A | Negative electrode, preparation method thereof, secondary battery and electric equipment | 比亚迪股份有限公司 | 2023-12-08 | — | — | CN | claimed |
| CN-113809314-B | Preparation method and application of porous silicon carbon or germanium carbon material | 北京科技大学 | 2023-01-31 | — | — | CN | claimed |
| CN-115172482-A | Heterojunction battery and preparation method thereof | 东方日升新能源股份有限公司 | 2022-10-11 | — | — | CN | claimed |
| WO-2022184054-A1 | NEGATIVE ELECTRODE MATERIAL, COMPOSITE NEGATIVE ELECTRODE MATERIAL AND PREPARATION METHOD THEREFOR, SECONDARY BATTERY, AND TERMINAL DEVICE | 华为技术有限公司 | 2022-09-09 | — | — | WO | claimed |
| CN-115000403-A | Cathode material, composite cathode material, preparation method of cathode material, secondary battery and terminal equipment | 华为技术有限公司 | 2022-09-02 | — | — | CN | claimed |
| CN-1584651-A | Low-loss digital light switches | UNIV ZHONGSHAN (CN) | 2005-02-23 | — | — | CN | claimed |
| US-6844070-B2 | Low-temperature plasma deposited hydrogenated amorphous germanium carbon abrasion-resistant coatings | LOCKHEED MARTIN CORPORATION (US) | 2005-01-18 | — | — | US | claimed |
| US-20040157353-A1 | Ultra scalable high speed heterojunction vertical n-channel MISFETs and methods thereof | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2004-08-12 | — | — | US | claimed |
| CN-1503374-A | Grid structure with independently made vertical doped distributions | �Ҵ���˾ | 2004-06-09 | — | — | CN | claimed |
| CN-1494604-A | Method for producing parts and vacuum processing system | ���ɿ�������˾ | 2004-05-05 | — | — | CN | claimed |
| US-20040043218-A1 | Low-temperature plasma deposited hydrogenated amorphous germanium carbon abrasion-resistant coatings | LOCKHEED MARTIN CORPORATION (US) | 2004-03-04 | — | — | US | claimed |
| CN-1307730-A | Thin film transistor and method of manufacturing the same | MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (JP) | 2001-08-08 | — | — | CN | claimed |
| CN-1236981-A | Film transistor and its making method | MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (JP) | 1999-12-01 | — | — | CN | claimed |
| US-4615298-A | Method of making non-crystalline semiconductor layer | SEMICONDUCTOR ENERGY LABORATORY CO., LTD., A CORP. OF JAPAN (JP) | 1986-10-07 | — | — | US | claimed |
| US-4137383-A | Process for stabilizing chlorine-containing resins | SEKISUI KAGAKU KOGYO KABUSHIKI KAISHA (JP) | 1979-01-30 | — | — | US | claimed |