SCHEMBL685802

SCHEMBL685802

C=CC(=O)OCC(=O)OC1(C2CCCC2)C2CC3CC(C2)CC1C3

nearest known ligand 0.31

Predicted protein targets (top 10)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 4/20 0.31
LMNA P02545 1/20 0.31
THRB P10828 1/20 0.31
HTT P42858 1/20 0.31
SMN1; SMN2 Q16637 1/20 0.31
TSHR P16473 4/20 0.30
TP53 P04637 2/20 0.30
HIF1A Q16665 2/20 0.30
CYP3A4 P08684 1/20 0.30
HSD17B10 Q99714 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL685796 0.99 ALDH1A1 (0.31) ALDH1A1LMNATHRBHTTSMN1; SMN2
SCHEMBL685622 0.88
SCHEMBL686075 0.88
SCHEMBL686071 0.85 ALDH1A1 (0.30) ALDH1A1LMNATHRBHTTSMN1; SMN2
SCHEMBL685564 0.84
SCHEMBL684924 0.84
SCHEMBL10136411 0.84 TSHR (0.39) ALDH1A1TSHRTP53HIF1ACYP3A4
SCHEMBL685535 0.83 EPHX1 (0.30)
SCHEMBL21249276 0.81
SCHEMBL685619 0.81

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 159 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9726976-B2 Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-08-08 US disclosed
US-9726976-B2 Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-08-08 US disclosed
US-9405187-B2 Salt, acid generator and resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-08-02 US disclosed
US-9405187-B2 Salt, acid generator and resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-08-02 US disclosed
US-9346750-B2 Salt and photoresist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-05-24 US disclosed
US-9346750-B2 Salt and photoresist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-05-24 US disclosed
US-9229320-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-01-05 US disclosed
US-9229320-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-01-05 US disclosed
US-9063414-B2 Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2015-06-23 US disclosed
US-9063414-B2 Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2015-06-23 US disclosed
US-7566522-B2 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2009-07-28 US disclosed
US-7566522-B2 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2009-07-28 US disclosed
US-20080274426-A1 Using acrylic ester and sulfonium said salt; high resolution semiconductors; microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-11-06 US disclosed
US-20080274426-A1 Using acrylic ester and sulfonium said salt; high resolution semiconductors; microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-11-06 US disclosed
US-20080193874-A1 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-08-14 US disclosed
US-20080193874-A1 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-08-14 US disclosed
US-20080166660-A1 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-07-10 US disclosed
US-20080166660-A1 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-07-10 US disclosed
US-20070218401-A1 liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-09-20 US disclosed
US-20070218401-A1 liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-09-20 US disclosed